The disclosure provides methods for removing polymeric fouling on process equipment during low density polyethylene manufacture. A purge cleaning composition with ethylene gas containing at least one C3+ hydrocarbon alkene for a period of time is used to remove polymer build-up in at least one location in the polymerization plant, such as, without limitation, the reactor or in tubing between a reactor and a pre-heater or between a cooler and a preheater.

A cleaning liquid for excessive powder removal is provided. The cleaning liquid includes a hydrocarbon solvent having an octanol/water partition coefficient (log P.sub.ow value) of 4.5 or more. The cleaning liquid is to remove excessive powder for molding adhering to a solidified object molded using the powder for molding.

Described herein is a non-aqueous composition including (a) an organic solvent; and (b) at least one additive of formulae I or II ##STR00001##
where R.sup.1 is H R.sup.2 is selected from the group consisting of H, C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.3 is selected from the group consisting of R.sup.2, R.sup.4 is selected from the group consisting of C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.10, R.sup.12 are independently selected from the group consisting of C.sub.1 to C.sub.10 alkyl and C.sub.1 to C.sub.10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

Please delete the current Abstract and replace it with the following substitute Abstract: A method for cleaning a semiconductor substrate, that includes releasing and dissolving an adhesive layer formed on a semiconductor substrate using a releasing and dissolving composition that contains: a quaternary ammonium salt; an amide-based solvent; a solvent represented by one of Formulae (L0) to (L4); and a solvent represented by Formula (T) or (G).

##STR00001##

The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction. The maximum value is 0.5 to 3.0, and an average surface roughness of the surface of the member is equal to or lower than 10 nm.

A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4). ##STR00001##

A cleaning agent composition for use in removal of an adhesive residue, the composition containing a quaternary ammonium salt and a solvent, wherein the solvent consists of an organic solvent, and the organic solvent includes an N,N,N,N-tetra(hydrocarbyl)urea.