A cleaning and drying method of a semiconductor substrate capable of suppressing collapse or breakdown of a pattern which occur at the time of drying a cleaning solution after cleaning the substrate and decomposition of a resin at a bottom of the pattern, and capable of removing the cleaning solution with good efficiency without using a specific device.

A metal resist cleaning liquid including a solvent and formic acid.

A cleaning liquid usable for cleaning a substrate provided with a metal resist, the cleaning liquid including a solvent, an organic acid, and a compound (A) represented by general formula (a-1) shown below (in the formula, Ra.sup.1 and Ra.sup.2 each independently represents an alkyl group having 1 to 3 carbon atoms).

##STR00001##

A cleaning solution includes first solvent having Hansen solubility parameters 25>.sub.d>13, 25>.sub.p>3, and 30>.sub.h>4; acid having acid dissociation constant, pKa, of 11<pKa<4, or base having pKa of 40>pKa>9.5; and surfactant. Surfactant is one or more of ionic surfactant, polyethylene oxide and polypropylene oxide, non-ionic surfactant, and combinations. Ionic surfactant is selected from group consisting of

##STR00001##

R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and X includes polar functional groups selected from OH, O, S P, P(O.sub.2), C(O)SH, C(O)OH, C(O)OR, O; N, C(O)NH, SO.sub.2OH, SO.sub.2SH, SOH, SO.sub.2, CO, CN, SO, CON, NH, SO.sub.3NH, SO.sub.2NH.

A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

The present disclosure is directed to non-corrosive cleaning compositions that are useful, e.g., for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

This disclosure relates to compositions for cleaning post etching residues on a semiconductor substrate, as well as related cleaning methods.

This invention relates to a photoresist stripper composition. The photoresist stripper composition according to the present invention comprises at least one choline compound; at least one polar aprotic solvent; and water; the weight percentage of the choline compound is from 2.5 to 50%, preferably from 5 to 50%, more preferably from 7 to 30%, and most preferably from 9 to 18% by weight based on the total weight of the composition. The photoresist stripper composition according to the present invention exhibits excellent photoresist cleaning performance and low etching to the substrate.

The composition for surface treatment according to the present invention includes a carboxylic acid compound having two or more nitrogen atoms, an ionic dispersing agent, and water, has a pH of less than 6, and is used for treating a surface of a polished object having a tungsten-containing layer.