Methods of hardening a case-nitrided metal article, methods of producing a hardened case-nitrided metal article, and hardened case-nitrided metal articles. The methods of hardening a case-nitrided metal article include heating the case-nitrided metal article to an aging temperature, maintaining the case-nitrided metal article at the aging temperature for an aging time, and cooling the case-nitrided metal article from the aging temperature. The methods of producing a hardened case-nitrided metal article include case-nitriding a metal article to produce a case-nitrided metal article and subsequently hardening the case-nitrided metal article. The hardened case-nitrided metal article comprises a body formed of a metal or a metal alloy, a surface surrounding the body, and a nitrided case layer formed in the body and extending inwardly from the surface of the body toward the core that includes a hardness that is greater than that of an otherwise equivalent case-nitrided metal article.

Methods of hardening a case-nitrided metal article, methods of producing a hardened case-nitrided metal article, and hardened case-nitrided metal articles. The methods of hardening a case-nitrided metal article include heating the case-nitrided metal article to an aging temperature, maintaining the case-nitrided metal article at the aging temperature for an aging time, and cooling the case-nitrided metal article from the aging temperature. The methods of producing a hardened case-nitrided metal article include case-nitriding a metal article to produce a case-nitrided metal article and subsequently hardening the case-nitrided metal article. The hardened case-nitrided metal article comprises a body formed of a metal or a metal alloy, a surface surrounding the body, and a nitrided case layer formed in the body and extending inwardly from the surface of the body toward the core that includes a hardness that is greater than that of an otherwise equivalent case-nitrided metal article.

A ball for a ball valve, wherein the ball comprises a substrate of metal having surface modified portions to act as seating surfaces for a seat of the ball valve; and a seat ring for a ball valve, wherein the seat ring comprises a substrate of metal having a surface modified portion to act as a seating surface for a ball of the ball valve.

A dual phase magnetic component, along with methods of its formation, is provided. The dual phase magnetic component may include an intermixed first region and second region formed from a single material, with the first region having a magnetic area and a diffused metal therein, and with the second region having a non-magnetic area. The second region generally has greater than 0.1 weight % of nitrogen.

A dual phase magnetic component, along with methods of its formation, is provided. The dual phase magnetic component may include an intermixed first region and second region formed from a single material, with the first region having a magnetic area and a diffused metal therein, and with the second region having a non-magnetic area. The second region generally has greater than 0.1 weight % of nitrogen.

A method and apparatus for nitride capping of titanium materials via chemical vapor deposition techniques is provided. The method includes forming a titanium nitride layer upon a titanium material layer formed on a substrate. The titanium nitride layer is formed by exposing the titanium material layer to a hydrogen-rich nitrogen-containing plasma followed by exposing the titanium material layer to a nitrogen-rich nitrogen-containing plasma. The titanium nitride layer is then exposed to an argon plasma followed by exposing the titanium nitride layer to a halide soak process.

A method and apparatus for nitride capping of titanium materials via chemical vapor deposition techniques is provided. The method includes forming a titanium nitride layer upon a titanium material layer formed on a substrate. The titanium nitride layer is formed by exposing the titanium material layer to a hydrogen-rich nitrogen-containing plasma followed by exposing the titanium material layer to a nitrogen-rich nitrogen-containing plasma. The titanium nitride layer is then exposed to an argon plasma followed by exposing the titanium nitride layer to a halide soak process.

Provided is a more efficient method of manufacturing a GaN film by the atomic layer deposition (ALD), wherein a high crystalline GaN film containing very few impurities is manufactured using a monovalent gallium compound without high-temperature thermal treatment such as laser annealing. The method of manufacturing a crystalline gallium nitride thin film by the ALD comprises a step 1 of feeding a monovalent organogallium complex into a reaction chamber where a substrate temperature is 350° C. or less, and a step 2 of feeding a nitriding gas into the reaction chamber.

Provided is a more efficient method of manufacturing a GaN film by the atomic layer deposition (ALD), wherein a high crystalline GaN film containing very few impurities is manufactured using a monovalent gallium compound without high-temperature thermal treatment such as laser annealing. The method of manufacturing a crystalline gallium nitride thin film by the ALD comprises a step 1 of feeding a monovalent organogallium complex into a reaction chamber where a substrate temperature is 350° C. or less, and a step 2 of feeding a nitriding gas into the reaction chamber.

A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.