A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

This disclosure is directed to an optic having a composited MgOMgF.sub.2 infrared anti-reflective coating that is suitable for use in LWIR, MWIR and SWIR ranges, and is particularly suitable for use in the LWIR range. The coated optic disclosed herein passes the severe abrasion test with a barring force between 2 pounds and 2.5 pounds. The MgOMgF.sub.2 infrared anti-reflective coating has a thickness in the range of 500 nm to 1500 nm and a reflectance value R.sub.x at 12 of less than 2% in the wavelength range of 7.25 nm to 11.75 nm.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.

The present invention relates to a method of forming a coating layer having plasma resistance, the method comprising steps of: preparing a substrate by placing the substrate in a substrate fixing device inside a process chamber; evaporating a Y.sub.2O.sub.3 deposition material provided in a solid form in an electron beam source by irradiating an electron beam on the Y.sub.2O.sub.3 deposition material; generating radical particles having activation energy by injecting a process gas containing oxygen for forming radicals into a RF energy beam source; irradiating an RF energy beam including the radical particles generated in the RF energy beam source, toward the substrate; depositing a thin film in which the evaporated deposition material is deposited on the substrate by being assisted by the RF energy beam, and densifying the thin film in which the deposition material deposited on the substrate forms a densified film by ion bombardment of the RF energy beam.

A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer comprising 40 mol % to less than 100 mol % of Y.sub.2O.sub.3 and above 0 mol % to less than 60 mol % of ZrO.sub.2 is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body by ion assisted deposition. The protective layer has a first thickness of less than 300 m on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.

In an amorphous carbon film of a sliding member, provided that a number of nitrogen atoms each singly bonded to three carbon atoms is A, and a number of nitrogen atoms each singly and doubly bonded to two carbon atoms, respectively, is B, a value A/B of the amorphous carbon film obtained through X-ray photoelectron spectroscopy analysis is 10 to 18. The method includes irradiating the surface of the substrate with nitrogen ion beams and irradiating a carbon target with electron beams, thereby forming an amorphous carbon film on the surface of the substrate while vapor-depositing a part of the carbon target onto the surface of the substrate. The output of the electron beams that irradiate the carbon target is 30 to 50 W.

A method of manufacturing an article comprises performing ion assisted deposition (IAD) to deposit a protective layer on at least one surface of the article, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 m and an average surface roughness of 10 micro-inches or less.

A method for manufacturing a solid-state battery device. The method can include providing a substrate within a process region of an apparatus. A cathode source and an anode source can be subjected to one or more energy sources to transfer thermal energy into a portion of the source materials to evaporate into a vapor phase. An ionic species from an ion source can be introduced and a thickness of solid-state battery materials can be formed overlying the surface region by interacting the gaseous species derived from the plurality of electrons and the ionic species. During formation of the thickness of the solid-state battery materials, the surface region can be maintained in a vacuum environment from about 10.sup.6 to 10.sup.4 Torr. Active materials comprising cathode, electrolyte, and anode with non-reactive species can be deposited for the formation of modified modulus layers, such a void or voided porous like materials.

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 m over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is equal to or less than the first average surface roughness.

A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body. The protective layer has a first thickness of less than 300 m on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.