Patent classifications
C23C14/0042
Coated articles with optical coatings having residual compressive stress
Disclosed herein are coated articles which may include a substrate and an optical coating that includes one or more layers of deposited material. At least a portion of the optical coating may include a residual compressive stress of more than 100 MPa. The coated article may include a strain-to-failure of 0.4% or more as measured by a Ring-on-Ring Tensile Testing Procedure. The optical coating may include a maximum hardness of 8 GPa or more and an average photopic transmission of 50% or greater.
Method and Apparatus for Deposition of Multilayer Device with Superconductive Film
A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.
Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Cr.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
AN OPTICAL ARTICLE COMPRISING A LIGHT ABSORBING COMPOUND AND A CORRESPONDING MANUFACTURING METHOD
This optical article comprises a base material having at least one face coated with an interferential multilayer coating providing either antireflective or high reflective properties. The coating comprises at least one layer of light absorbing material which has an adjustable composition and thickness, such that the visible light mean transmission factor of the coating is controllable to have a value between 95% and 5%.
PROCESS FOR MAKING ANTIINFLAMMATORY, ANTIBACTERIAL, ANTIFUNGAL AND VIRICIDAL MATERIALS
Provided herein are methods for preparing a metal matrix composite material by a deposition process. The metal matrix composite materials described herein are useful for anti-inflammatory, antibacterial, antifungal and viricidal applications.
Deposition systems and methods
A system is disclosed, including a processing chamber for a deposition process; a cathode within the chamber, configured to introduce a sputter gas and a reactive gas adjacent to a target; a substrate holder, disposed opposite the cathode within the processing chamber, configured to secure a substrate to receive a deposition from the target; and a control system configured to monitor a target voltage and to control a flow rate of the reactive gas to maintain the target voltage within a desired range during the deposition process. Methods and devices for deposition processes are also disclosed.
Coated articles with optical coatings having residual compressive stress
A coated article includes a substrate having a major surface, and an optical coating disposed on the major surface of the substrate. At least a portion of the optical coating includes a residual compressive stress of about 50 MPa or more. The coated article has strain-to-failure of about 0.5% or more as measured by a Ring-on-Ring Tensile Testing Procedure. The coated article has an average photopic transmission of about 80% or greater.
ELECTRODE SUBSTRATE FILM AND METHOD OF MANUFACTURING THE SAME
[Object] Provided are an electrode substrate film which does not cause trouble in a process to create a circuit pattern formed of a metal thin line and in which the circuit pattern is less visible even under highly bright illumination, and a method of manufacturing the same.
[Solving Means] An electrode substrate film with a transparent substrate 52 and a metal laminate thin line includes a metal absorption layer 51 with a film thickness of 20 nm to 30 nm inclusive as a first layer, and a metal layer 50 as a second layer, counted from the transparent substrate side. Optical constants of the metal absorption layer in a visible wavelength range (400 to 780 nm) satisfy conditions that a refractive index is 1.8 to 2.2 and an extinction coefficient is 1.8 to 2.4 at a wavelength of 400 nm, the refractive index is 2.2 to 2.7 and the extinction coefficient is 1.9 to 2.8 at a wavelength of 500 nm, the refractive index is 2.5 to 3.2 and the extinction coefficient is 1.9 to 3.1 at a wavelength of 600 nm, the refractive index is 2.7 to 3.6 and the extinction coefficient is 1.7 to 3.3 at a wavelength of 700 nm, and the refractive index is 3.1 to 3.8 and the extinction coefficient is 1.5 to 3.4 at a wavelength of 780 nm. The highest reflectance in the visible wavelength range attributed to reflection at an interface between the transparent substrate and the metal absorption layer is 40% or less.
METHOD OF FORMING TIN OXIDE LAYER USING TIN METAL TARGET
Provided is a method of forming a tin oxide layer using a tin metal target which forms the tin oxide layer on a glass substrate using the tin metal target. The present invention provides the method of forming a tin oxide layer using a tin metal target, which includes forming a tin oxide buffer layer (SnO.sub.2) on the glass substrate by sputtering using the tin metal target and forming a tin oxide (SnO.sub.2−x) semiconductor layer (0<x≦0.01) on the tin oxide buffer layer by sputtering using the tin metal target.
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
A film formation apparatus includes a chamber that is a sealed container in which a target formed of a film formation material is placed, and into which the workpiece is carried, a gas discharging unit discharging a gas in the sealed container for a predetermined time period after the workpiece is carried into the chamber to obtain a base pressure, and a sputter gas introducing unit introducing a sputter gas containing oxygen to the interior of the chamber having undergone the discharging and becoming the base pressure. The sputter gas introducing unit decreases an oxygen partial pressure in the sputter gas to be introduced in the chamber in accordance with an increase in the base pressure due to an increase of the film formation material sticking to the interior of the chamber.