A reactive particles supply system that may include an adjustable gas supply unit that is arranged to supply gas and to set a gas condition, a reactive particles supply unit that may be arranged to receive the gas, and an adjustable reactive particles output unit that may include a reactive particles input, a second reactive particles output, and a reactive particles path. The second reactive particles output is configured to output reactive particles towards an opening of a vacuumed chamber. The adjustable reactive particles output unit is arranged to mechanically configure at least one element of the reactive particles path according to the reactive particles condition.

A substrate having a surface coated with a piezoelectric coating I, the coating including A-xMexN, wherein A is at least one of B, Al, Ga, In, Tl, and Me is at least one metallic element Me from the transition metal groups 3b, 4b, 5b 6b the lanthanides, and Mg the coating I having a thickness d, and further including a transition layer wherein the ratio of atomic percentage of Me to atomic percentage of Al steadily rises along a thickness extent δ3 of said coating for which there is valid:

δ3≤d.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

Disclosed herein are coated articles which may include a substrate and an optical coating that includes one or more layers of deposited material. At least a portion of the optical coating may include a residual compressive stress of more than 100 MPa. The coated article may include a strain-to-failure of 0.4% or more as measured by a Ring-on-Ring Tensile Testing Procedure. The optical coating may include a maximum hardness of 8 GPa or more and an average photopic transmission of 50% or greater.

A process for the uniform controlled growth of materials on a substrate that directs a plurality of pulsed flows of a precursor into a reaction space of a reactor to deposit the thin film on the substrate. Each pulsed flow is a combination of a first pulsed subflow and a second pulsed subflow of the same precursor, wherein a pulse profile of the second pulsed subflow overlaps at least a portion of a latter half of a pulse profile of the first pulsed subflow having a non-uniform pulse profile.

Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium, titanium, chromium, magnesium and hafnium. Depositing the additive-containing aluminium nitride film includes introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate, in which the flow rate of the gaseous mixture comprises a nitrogen gas flow rate, and in which the nitrogen gas flow rate is less than or equal to about 50% of the flow rate of the gaseous mixture and also is sufficient to fully poison the target.

The present disclosure provides a transparent thin film heater including: a metal layer; and a transparent conductive oxide layer, wherein the transparent conductive oxide layer includes a composition represented by the following Chemical Formula 1 and is doped with nitrogen:

Zn.sub.xSn.sub.1−xO.sub.2  [Chemical Formula 1] wherein 0<x≤0.12.

The instant disclosure relates to methods, devices, and code for controlling a coating process and, in particular, for controlling a coating process of a substrate. According to various embodiments, the method may include driving a first actuator that supplies the coating process, which is based on monitored process variables that are detected in parallel with one another. The control variables may be considered when driving the first actuator. The method may also include driving a second actuator that supplies the coating process, which is based on the detected monitored process variables. The detected monitored process variables may also be considered when driving the second actuator.

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

There is provided a technique that includes: (a) processing a substrate by executing a processing program stored in a memory; (b) inspecting and determining whether the processing program is infected with a computer virus; and (c) executing at least one interruption program stored in the memory and configured to interrupt the processing program when the processing program is determined to be infected with the computer virus.