C23C14/0057

PROCESS FOR DEPOSITING METAL OR METALLOID CHALCOGENIDES
20170218498 · 2017-08-03 ·

The instant invention provides a process for making metal or metalloid dichalcogenides from a metal or metalloid and elemental chalcogen using magnetron sputtering. The process may comprise the steps of directing sputtering gas ions at a metal or metalloid target, reacting the ejected metal or metalloid atoms from the target surface with an elemental chalcogen vapor and assembling the metal or metalloid dichalcogenides on a substrate. It can be used to make thin films of the dichalcogenides which have a use in layered semiconductor devices. The process of the invention is suitable for upscaling to potentially make the films on a wafer level. Films on large areas with high uniformity have for instance been obtained utilizing the reaction of the metal or metalloid in an ambient of vaporized chalcogen under controlled conditions and with low growth rates. The process of the invention can be used to deposit two dimensional channels as part of field effect transistors. The materials made with the process in general can have a use in nanoelectronics as a catalyst, as a photo-detector, photovoltaic or photocatalyst.

MEMBER FOR PLASMA PROCESSING DEVICE AND PLASMA PROCESSING DEVICE PROVIDED WITH SAME
20220042161 · 2022-02-10 ·

Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

METHOD FOR PREPARING AMMONIUM THIOMOLYBDATE-POROUS AMORPHOUS CARBON COMPOSITE SUPERLUBRICITY FILM

A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film is disclosed. First, a porous amorphous carbon film is prepared by an anode layer ion source assisted plasma chemical vapor deposition method and a reactive magnetron sputtering method on a substrate. The porous amorphous carbon film is then impregnated in an ammonium thiomolybdate solution, so that the ammonium thiomolybdate is adsorbed on the porous amorphous carbon film, and the impregnated porous amorphous carbon film is air dried. During the friction process, the composited porous amorphous carbon superlubricity film prepared in the present disclosure promotes the in-situ decomposition of ammonium thiomolybdate to generate molybdenum disulfide by utilizing the friction heat at the initial stage of running-in, further to generate a graphene-like structure under the function of a catalyst, thus realizing a macroscopic super lubricity through a heterogeneous incommensurate contact between graphene and molybdenum disulfide.

ARGON-HELIUM BASED COATING
20210404053 · 2021-12-30 ·

A sputtering system may include a substrate. The sputtering system may include at least one target. The at least one target may include at least one coating material to coat at least one layer onto the substrate. The at least one coating material may be sputtered onto the substrate in a presence of an inert gas. The inert gas may include argon gas and helium gas.

ASSEMBLY FOR FUEL INJECTOR AND COATING METHOD FOR THE SAME
20210396200 · 2021-12-23 ·

An assembly for a fuel injector includes a base material, a coated region formed on a surface of the base material, an uncoated region formed on a surface of the base material, in contact with and supported by a jig, and formed to be partitioned from the coated region so as to prevent the coated region from peeling off during laser welding, and a coating material stacked in a multilayer structure on the coated region. As a result, friction reduction, high hardness, impact resistance, heat resistance, and durability of the assembly may be improved, and a portion requiring the coating may be precisely coated.

COATED MEMBER, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE COATED MEMBER
20210395879 · 2021-12-23 ·

A coated member, an electronic device, and a method for manufacturing the coated member are provided. The coated member comprises a substrate, a color layer formed on a surface of the substrate, and an interference layer formed on a surface of the color layer. A coordinate L* corresponding to a color space presented by the color layer in a CIE LAB color system is within a preset range. When the coordinates of L* are within the preset range, the color of the coated member may be the same or may be different from the color of the color layer. Light passes through the interference layer and then enters the color layer. The color layer reflects and refracts the light. The reflected light enters the interference layer. The interference layer interferes with the reflected light, so that the coated member appears to be a target color.

HIGH-PERFORMANCE WAFER-LEVEL LEAD SULFIDE NEAR INFRARED PHOTOSENSITIVE THIN FILM AND PREPARATION METHOD THEREOF
20210388480 · 2021-12-16 ·

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a Pbs thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level Pbs photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The Pbs photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a Pbs Mega-pixel-level array imaging system.

PVD process for the deposition of Al.SUB.2.O.SUB.3 .and a coated cutting tool with at least one layer of Al.SUB.2.O.SUB.3
11326248 · 2022-05-10 · ·

A coated cutting tool including a substrate and a single layer or multi-layer hard material coating is provided. The substrate is selected from cemented carbide, cermet, ceramics, cubic boron nitride (cBN), polycrystalline diamond, steel or high-speed steel. The hard material coating includes at least one layer of gamma-Al.sub.2O.sub.3, exhibiting particularly high hardness and reduced Young's modulus. The gamma-Al.sub.2O.sub.3 layer of the coated cutting tool is obtainable by means of a reactive magnetron sputtering process using at least one Al target, wherein the deposition is carried out using a reaction gas composition of argon (Ar) and oxygen (O.sub.2) at a total reaction gas pressure within the range from at least 1 Pa to at most 5 Pa, at an O.sub.2 partial pressure within the range from 0.001 Pa to 0.1 Pa, and at a temperature within the range from 400° C. to 600° C.

N-TYPE SNS THIN FILM, PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL, METHOD FOR MANUFACTURING N-TYPE SNS THIN FILM, AND MANUFACTURING APPARATUS OF N-TYPE SNS THIN FILM
20230261130 · 2023-08-17 ·

This n-type SnS thin-film has n-type conductivity, an average thickness thereof is 0.100 μm to 10 μm, a ratio (α.sub.1.1/α.sub.1.6) of an absorption coefficient α.sub.1.1 at a photon energy of 1.1 eV to an absorption coefficient α.sub.1.6 at a photon energy of 1.6 eV is 0.200 or less, an atomic ratio of an S content to an Sn content is 0.85 to 1.10.

Transparent nanolayered structure having improved wear-resistant and flexibility

Provided is a transparent structure having improved wear resistance and flexibility, and a structure according to the present invention is a nanolayered structure in which a nitride nanofilm of one or more elements selected from metals and metalloids; and a boron nitride nanofilm are alternately layered.