A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.

In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

The present disclosure relates to a decoration element comprising a light reflective layer; and a light absorbing layer provided on the light reflective layer, wherein the light absorbing layer has surface resistance of 20 ohm/square or greater.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

A magnetically enhanced plasma apparatus includes a hollow cathode target assembly; an anode positioned on top of the hollow cathode target assembly, thereby forming a gap between the anode and the hollow cathode target assembly; a cathode magnet assembly; a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode target assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode target assembly; an electrode positioned adjacent to the row of magnets behind the gap; a first radio frequency (RF) power supply coupled to the electrode, wherein the electrode is coupled to ground through an inductor; and a second radio frequency (RF) power supply coupled to the hollow cathode target assembly. The second RF power supply ignites and sustains plasma in the hollow cathode target assembly. A frequency and power of the second RF power supply are selected to increase at least one of a degree of dissociation of feed gas molecules and degree of ionization of feed gas atoms. A frequency and power of the first RF power supply are selected to increase a degree of dissociation of feed gas molecules to form a layer from sputtering hollow cathode target material onto a substrate.

A method of sputtering a layer on a substrate using a high-energy density plasma (HEDP) magnetron includes positioning the magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying unipolar negative direct current (DC) voltage pulses from a pulse power supply with a pulse forming network (PFN) to a pulse converting network (PCN); and adjusting an amplitude and frequency associated with the plurality of unipolar negative DC voltage pulses causing a resonance mode associated with the PCN. The PCN converts the unipolar negative DC voltage pulses to an asymmetric alternating current (AC) signal that generates a high-density plasma discharge on the HEDP magnetron. An increase in amplitude or pulse duration of the plurality of unipolar negative DC voltage pulses causes an increase in the amplitude of a negative voltage of the asymmetric AC signal in response to the PCN being in the resonance mode, thereby causing sputtering discharge associated with the HEDP magnetron to form the layer from the cathode target on the substrate. A corresponding apparatus and computer-readable medium are disclosed.

A coated member, an electronic device, and a method for manufacturing the coated member are provided. The coated member comprises a substrate, a color layer formed on a surface of the substrate, and an interference layer formed on a surface of the color layer. A coordinate L* corresponding to a color space presented by the color layer in a CIE LAB color system is within a preset range. When the coordinates of L* are within the preset range, the color of the coated member may be the same or may be different from the color of the color layer. Light passes through the interference layer and then enters the color layer. The color layer reflects and refracts the light. The reflected light enters the interference layer. The interference layer interferes with the reflected light, so that the coated member appears to be a target color.

A transparent electroconductive film (X) includes a transparent resin substrate (10) and a transparent electroconductive layer (20) in this order in a thickness direction (T). The transparent electroconductive layer (20) has, in an in-plane direction orthogonal to the thickness direction (T), a first direction in which a compressive residual stress is maximum, and a second direction orthogonal to the first direction. In the transparent electroconductive layer (20), a ratio of a second compressive residual stress in the second direction to a first compressive residual stress in the first direction is 0.82 or more.

A method for forming a layer of alumina on the surface of a metal alloy substrate including aluminium, includes depositing a first aluminium layer on a surface of the metallic substrate, depositing a second layer by vapour-phase deposition on the first layer, the second layer comprising aluminium, a halogen and oxygen, and heat treatment of the substrate coated with the first and second layers under oxidising atmosphere in order to form the layer of alumina at the surface of the metallic substrate.