[Object] Provided are an electrode substrate film which does not cause trouble in a process to create a circuit pattern formed of a metal thin line and in which the circuit pattern is less visible even under highly bright illumination, and a method of manufacturing the same.

[Solving Means] An electrode substrate film with a transparent substrate 52 and a metal laminate thin line includes a metal absorption layer 51 with a film thickness of 20 nm to 30 nm inclusive as a first layer, and a metal layer 50 as a second layer, counted from the transparent substrate side. Optical constants of the metal absorption layer in a visible wavelength range (400 to 780 nm) satisfy conditions that a refractive index is 1.8 to 2.2 and an extinction coefficient is 1.8 to 2.4 at a wavelength of 400 nm, the refractive index is 2.2 to 2.7 and the extinction coefficient is 1.9 to 2.8 at a wavelength of 500 nm, the refractive index is 2.5 to 3.2 and the extinction coefficient is 1.9 to 3.1 at a wavelength of 600 nm, the refractive index is 2.7 to 3.6 and the extinction coefficient is 1.7 to 3.3 at a wavelength of 700 nm, and the refractive index is 3.1 to 3.8 and the extinction coefficient is 1.5 to 3.4 at a wavelength of 780 nm. The highest reflectance in the visible wavelength range attributed to reflection at an interface between the transparent substrate and the metal absorption layer is 40% or less.

A reactive particles supply system that may include an adjustable gas supply unit that is arranged to supply gas and to set a gas condition, a reactive particles supply unit that may be arranged to receive the gas, and an adjustable reactive particles output unit that may include a reactive particles input, a second reactive particles output, and a reactive particles path. The second reactive particles output is configured to output reactive particles towards an opening of a vacuumed chamber. The adjustable reactive particles output unit is arranged to mechanically configure at least one element of the reactive particles path according to the reactive particles condition.

Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

This n-type SnS thin-film has n-type conductivity, an average thickness thereof is 0.100 μm to 10 μm, a ratio (α.sub.1.1/α.sub.1.6) of an absorption coefficient α.sub.1.1 at a photon energy of 1.1 eV to an absorption coefficient α.sub.1.6 at a photon energy of 1.6 eV is 0.200 or less, an atomic ratio of an S content to an Sn content is 0.85 to 1.10.

A reactive particles supply system that may include an adjustable gas supply unit that is arranged to supply gas and to set a gas condition, a reactive particles supply unit that may be arranged to receive the gas, and an adjustable reactive particles output unit that may include a reactive particles input, a second reactive particles output, and a reactive particles path. The second reactive particles output is configured to output reactive particles towards an opening of a vacuumed chamber. The adjustable reactive particles output unit is arranged to mechanically configure at least one element of the reactive particles path according to the reactive particles condition.

A strain gauge includes a flexible substrate; a functional layer formed of a metal, an alloy, or a metal compound, on one surface of the substrate; and a resistor formed of material including at least one from among chromium and nickel, on one surface of the functional layer.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

A treatment system includes a treatment tool and an energy source apparatus. The treatment tool includes a heater and bipolar electrodes to grip a treatment target. The energy source apparatus supplies electrical energy to the treatment tool. A processor controls the output to the bipolar electrodes and the heater. The processor causes a high-frequency electric power to be output to the bipolar electrodes and detects a parameter that varies depending on tissue volume of the treatment target. The processor sets a target value related to an output control process for controlling the output to the heater. The processor controls the output to the heater so as to modify the treatment target with the heat of the heater. The processor increases the output and temperature to the heater until at least a predetermined point of time after starting the output control process for controlling the output to the heater.

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.