A sputtering system may inject hydrogen and a sputtering gas into a chamber of the sputtering system, which may cause at least one layer of a hydrogenated semiconductor material, such as hydrogenated silicon (Si:H), to be sputtered onto a substrate disposed in the chamber until the at least one layer has a thickness that satisfies a threshold. In some implementations, the hydrogen and the sputtering gas may be injected into the chamber of the sputtering system while a temperature in the chamber is in a range from 145 degrees Celsius to 165 degrees Celsius. Accordingly, in some implementations, the sputtered layer of the hydrogenated semiconductor material may have one or more optical properties that satisfy a threshold to enable operation in a 9xx nanometer wavelength regime and at larger wavelengths.

The oxide film preparation method of the present disclosure includes placing a wafer that is to be deposited with a film in a reaction chamber, introducing a first mixed gas of a bombardment gas and an oxidization gas into the reaction chamber, applying DC power and radio frequency power to the target, exciting the first mixed gas to form a plasma to bombard the target to form an oxide film on the wafer, stopping applying the DC power and the RF power on the target, introducing a second mixed gas of the bombardment gas, the oxidization gas, and nitrogen into the reaction chamber, applying the RF power to the base, exciting the second mixed gas to form the plasma to bombard the oxide film to form an oxynitride film, continuing to introduce the second mixed gas to the reaction chamber, exciting the second mixed gas to form the plasma to bombard the target and the oxynitride film formed in step 3 to form an oxynitride film on the oxynitride film formed in step 3.

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

An apparatus is provided, comprising: a film formation chamber; a substrate holder provided in the film formation chamber and holding a substrate (S) to be formed with a film; a decompressor configured to reduce a pressure in the film formation chamber to a predetermined pressure; a discharge gas introducer configured to introduce a discharge gas into the film formation chamber; two or more sputtering electrodes each provided with a target (T1, T2) to be a film-forming material, the sputtering electrodes facing the substrate as a single substrate; a DC power source configured to supply electric power to the sputtering electrodes; two or more pulse-wave conversion switches connected between the DC power source and the sputtering electrodes, the pulse-wave conversion switches each being configured to convert a DC voltage to be applied to each of the sputtering electrodes to a pulse-wave voltage; a programmable transmitter configured to be programmable with a pulse generation control signal pattern corresponding to the electric power to be supplied to each of the sputtering electrodes, the programmable transmitter being further configured to control each of the pulse-wave conversion switches in accordance with the program; and a pulsed reactive gas introducer configured to control introduction of the reactive gas from the reactive gas introducer to the film foiniation chamber on the basis of the pulse generation control signal pattern from the electric power controller.

Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film.

There is provided a film forming apparatus including: a processing container whose interior is kept in a vacuum atmosphere; a stage provided within the processing container and configured to place a substrate thereon; a first film-forming gas supply part configured to supply a first film-forming gas for forming an organic film on a member within the processing container; a second film-forming gas supply part configured to supply a second film-forming gas for forming a film on the substrate; and a modifying gas supply part configured to supply a modifying gas for modifying the organic film and to suppress a film from being formed on a surface of the organic film by the second film-forming gas.

An evaporation apparatus (100) for depositing material on a flexible substrate (160) supported by a processing drum (170) is provided. The evaporation apparatus includes: a first set (110) of evaporation crucibles aligned in a first line (120) along a first direction for generating a cloud (151) of evaporated material to be deposited on the flexible substrate (160); and a gas supply pipe (130) extending in the first direction and being arranged between an evaporation crucible of the first set (110) of evaporation crucibles and the processing drum (170), wherein the gas supply pipe (130) includes a plurality of outlets (133) for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.

A strain gauge includes a flexible substrate; a functional layer formed of a metal, an alloy, or a metal compound, on one surface of the substrate; and a resistor formed of material including at least one from among chromium and nickel, on one surface of the functional layer.

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

In one aspect, a system for depositing a film on a substrate is disclosed, which comprises at least one metallization source for generating metal atoms, and at least one reactive source for generating at least one reactive species. The system further includes an inner cooling cylinder and a substrate cylinder, where the inner cooling cylinder is fixedly positioned relative to the substrate cylinder, and the substrate cylinder at least partially surrounds the inner cooling cylinder. At least one mount is coupled to the substrate cylinder for mounting one or more substrates to the substrate cylinder.