A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Provided is a radio wave transmittable laminate, which includes a substrate; a primer coating layer located on an upper surface of the substrate and including a polymer resin; a metal layer located on an upper surface of the primer coating layer and made of a metal; a plurality of micro cracks formed in the metal layer so as to transmit radio waves; and a hole pattern constituted by a plurality of holes which vertically penetrate the metal layer so as to transmit the radio waves.

A high-performance optical surface includes: a substrate having a first surface and a second surface opposite to the first surface; a first anti-reflection (A/R) coating formed on the second surface of the substrate; a coated layer formed over the A/R coating on a surface of the A/R coating opposite to the stress compensation layer, where a surface of the coating layer opposite to the first A/R coating is diamond point turned or polished to improve finish; and a second A/R coating formed on the polished surface of the coating layer to formed the high-performance reflective surface.

A method for producing a CdTe solar cell is provided, wherein at least the following layers are deposited on a glass substrate within a vacuum chamber: a TCO layer acting as a frontal contact; at least one CdTe layer; a thin layer of a chlorine-containing compound, and an electrically conductive layer acting as a return contact. Here, a maximally 20 nm thick passivation layer made from CdS, in which chemically non-bound oxygen is embedded, is deposited on the TCO layer prior to deposition of at least one CdTe-layer.

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

An installation for continuously coating wires by means of plasma deposition includes at least one plasma deposition chamber having a pressure-tight inlet and a pressure-tight outlet which are capable of maintaining a reduced pressure inside the chamber when they are passed through by a wire which travels through the chamber. At least one generator of plasma rays is provided in the chamber for the deposition of a target material on the external surface of the wire in a portion thereof which is between the pressure-tight inlet and the pressure-tight outlet. A transport system is provided in the installation in order to progressively draw the wire through the plasma deposition chamber.

A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MC.sub.x. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

A gas barrier film including a polymer base, an undercoat layer that contains, as the main component, an acrylic resin having at least one side chain selected from the group consisting of the side chains (I) to (III) mentioned below, and an inorganic layer, wherein the undercoat layer and the inorganic layer are arranged in this order on at least one surface of the polymer base in such a manner that the undercoat layer and the inorganic layer are in contact with each other: (I) a side chain having an acrylic polymer skeleton; (II) a side chain having a dimethylsiloxane skeleton; and (III) a side chain having a skeleton containing a fluorine atom.

Provided is a radio wave transmittable laminate, which includes a substrate; a primer coating layer located on an upper surface of the substrate and including a polymer resin; a metal layer located on an upper surface of the primer coating layer and made of a metal; a plurality of micro cracks formed in the metal layer so as to transmit radio waves; and a hole pattern constituted by a plurality of holes which vertically penetrate the metal layer so as to transmit the radio waves.