An optical element (200), has a first surface configured to convey light, a second surface configured to convey light, an optical path between the first surface and the second surface, a filter coating (230) applied to the first surface, and a colour corrected anti-reflection (AR) coating (240) with colour correcting and antireflection characteristics applied to the second surface. The AR coating is configured according to an antireflective function to maximise photopic transmission and/or, integrated visual photopic transmission (IVPT) of the optical path. The second surface is disposed opposite the first surface, and the antireflective function is determined according to a daylight emission a I(), a transmission spectrum of the antireflection/colour corrective coating T() and a thickness a d(), of the film for a specified wavelength.

Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

A method of manufacturing a solar cell including depositing a first electrode over a substrate under vacuum, depositing at least one p-type semiconductor absorber layer over the first electrode without breaking the vacuum, where the p-type semiconductor absorber layer comprises a copper indium selenide (CIS) based alloy material, sputter depositing an n-type semiconductor layer over the at least one p-type semiconductor absorber layer to form zinc oxysulfide in the n-type semiconductor layer without breaking the vacuum, and depositing a second electrode over the n-type semiconductor layer without breaking the vacuum.

Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-timeduring production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

The present invention provides a stacked body including a germanium layer, an organic material layer, a zinc compound layer, and the like, thereby exhibiting a specific color and glossiness, transmitting electromagnetic waves, and having excellent water resistance, and more particularly, a stacked body including a substrate and a deposition layer formed on the substrate, wherein the deposition layer includes the organic material layer made of an organic material, the zinc compound layer made of zinc sulfide (ZnS) or zinc selenium (ZnSe), and the germanium layer made of germanium (Ge) or a germanium alloy.

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

An article including a stack of layers including a high refractive index layer and a low refractive index layer; wherein at least one layer of the stack includes a wavelength selective absorbing material; and wherein the stack of layers has a transparent region with an edge at a wavelength in which light is absorbed by the wavelength selective absorbing material, and a reflection band with an edge at a wavelength in which light is reflected is disclosed. Compositions and optical devices including the article are also disclosed. Additionally, there is disclosed a method of making the article, the composition, and the optical device.

A method for producing a CdTe solar cell is provided, wherein at least the following layers are deposited on a glass substrate within a vacuum chamber: a TCO layer acting as a frontal contact; at least one CdTe layer; a thin layer of a chlorine-containing compound, and an electrically conductive layer acting as a return contact. Here, a maximally 20 nm thick passivation layer made from CdS, in which chemically non-bound oxygen is embedded, is deposited on the TCO layer prior to deposition of at least one CdTe-layer.