Patent classifications
C23C14/081
Anti-reflective sputtering stack with low Rv and low Ruv
The present invention provides a UV antireflective coating stack for ophthalmic lenses. The antireflective coating stack is deposited by sputtering, which lowers the reflectivity of the antireflective stack in the UV range and maintains low reflectivity in the visible range. The antireflective coating stack offers improved thermo-mechanical performance as compared to evaporation-based UV antireflective stacks.
Fabric coloring method and colored fabric
The present application provides a fabric coloring method and a colored fabric, where the fabric coloring method includes: performing radiation drying on a base cloth; sequentially forming an adhesive layer and at least one color-generating layer on a surface of the base cloth after the radiation drying by vacuum deposition, where the adhesive layer contains at least one of Ti, Cr, Si and Ni, and a thickness of the adhesive layer ranges from 1 nm to 2000 nm; the color-generating layer contains at least one of Al, Ti, Cu, Fe, Mo, Zn, Ag, Au, and Mg, and the total thickness of the color-generating layer ranges from 1 nm to 4000 nm. The fabric coloring method can not only produce rich colors and make the colored fabric have good color fastness, but also reduce the sensitivity of color of the colored fabric to thickness of the film, thus improving the industrial operability.
Protective coating for a thermally stressed structure
Provided is a method for arranging a protective coating for a thermally stressed structure, having at least one layer of alpha-aluminium oxide or of element-modified alpha-aluminium oxide, and wherein the protective coating is applied by reactive cathodic arc vaporization. A protective coating produced by the method and a component having a protective coating is also provided.
Ultra-thin ceramic coating on separator for batteries
Separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, systems and methods for fabricating the same. In one implementation, a separator is provided. The separator comprises a polymer substrate (131), capable of conducting ions, having a first surface and a second surface opposing the first surface. The separator further comprises a first ceramic-containing layer (136), capable of conducting ions, formed on the first surface. The first ceramic-containing layer (136) has a thickness in arrange from about 1,000 nanometers to about 5000 nanometers. The separator further comprises a second ceramic-containing layer (138), capable of conducting ions, formed on the second surface. The second ceramic-containing layer (138) is a binder-free ceramic-containing layer and has a thickness in arrange from about 1 nanometer to about 1,000 nanometers.
OXIDE SINTERED BODY
An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.
Protective metal oxy-fluoride coatings
An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of M.sub.xO.sub.yF.sub.z, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.
COATED CUTTING TOOL
A coated cutting tool and a process for the production thereof id provided. The coated cutting tool consists of a substrate body of WC-Co based cemented carbide and a coating, the coating including a first (Ti,Al)N multilayer, a first gamma-aluminium oxide layer, and a set of alternating second (Ti,Al)N multilayers and second gamma-aluminium oxide layers.
Black light shielding member
Provided is a black light-shielding member, which has an excellent effect of anti-reflection that based on low glossiness and has a high blackness. A black light-shielding member including a substrate film, a resin-made light-shielding layer having a concave-convex shape formed on at least one surface of the substrate film, and a blackened layer formed on the resin-made light-shielding layer is produced. By adjusting an arithmetic mean surface roughness Ra of the surface on which the light-shielding layer and the blackened layer are formed to be 0.25 μm or more, and the maximum thickness of the blackened layer is less than the said Ra, a blackness with an L value of 12 or less is achieved.
Methods for treating magnesium oxide film
A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO layer to oxygen for approximately 5 seconds to approximately 20 seconds at a flow rate of approximately 10 sccm to approximately 15 sccm, and forming a second MgO layer on the first MgO layer by sputtering the MgO target using RF power. The method may be performed after periodic maintenance of a process chamber to increase the tunnel magnetoresistance (TMR) of the tunnel layer.
VACUUM PROCESSING APPARATUS
A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.