A separator includes a porous body, and a particle membrane that is formed on at least one principal surface of the porous body. The particle membrane is made of inorganic particles, and has a void formed therein by the inorganic particles. The particle membrane has a porosity that is non-uniform in the thickness direction thereof.

The present invention provides a device for sputtering a material onto a substrate having a surface. The device comprises a chamber that has a target window where sputtering of the surface of the substrate takes place, via a force produced by a pair of magnets. The magnets are moved across the surface of the substrate via a motor of the device. Furthermore, a method of using such a device for sputtering is also contemplated.

The invention relates to a method of producing a solid-state component, in particular for a quantum component, preferably for a qubit, comprising one or more thin films, the one or more thin films comprising a first material and each said film having a thickness selected between a monolayer and 100 nm and is deposited onto a substrate surface of a substrate, wherein the production process is carried out in a reaction chamber sealed with respect to the ambient atmosphere. Further, the invention relates to a solid-state component, in particular for a quantum component, preferably for a qubit, comprising one or more thin films, one of the one or more thin films comprises a first material with a thickness between a monolayer and 100 nm and is deposited onto a substrate surface of a substrate. In addition, the invention relates to a quantum component comprising such a solid-state component according to the present invention and to an apparatus for producing such a solid-state component according to the present invention.

The invention relates to an object having a coating arranged on at least one surface of the object, which comprises at least one antimicrobially active layer having an antimicrobial agent, wherein the agent comprises a copper (I) compound and/or a copper (II) compound.

A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

A method for coating a thin film in a rolling manner and a thin film coating apparatus are provided. The method includes: floating a thin film material on a liquefied material; rolling a cylindrical substrate after contacting the cylindrical substrate with the thin film material; and coating the thin film material on a surface of the cylindrical substrate by using an attraction force between the surface of the cylindrical substrate and the thin film material.

The present invention relates to a laminated body containing at least (a) a transparent substrate, (b) a first metal layer that is overlaid on the substrate and forms an electrode, and (c) a second metal layer having a light reflectance of 20% or less, in which the second metal layer is overlaid on the surface of the first metal layer opposite to the substrate or between the first metal layer and the substrate by sputtering using a reactive sputtering gas, and the second metal layer is constituted by an oxide or nitride of a Cu alloy containing at least Zn.

An interconnect and a method of making an interconnect between one or more features on a substrate comprises: sputtering a noble metal-copper eutectic thin film under controlled power on an oxide grown or deposited on a substrate; and forming an amorphous alloy structure from the noble metal-copper eutectic thin film in the shape of the interconnect and the interconnect comprising no grain or grain boundaries without temperature sensitive resistivity.

A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

The present application relates to a conductive structure body and a method for manufacturing the same. A conductive structure body according to an exemplary embodiment of the present application comprises a substrate; a metal layer provided on the substrate; and a light reflection reducing layer provided on at least one surface of the metal layer and comprising copper-manganese-nickel oxide.