There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1), having a perovskite structure, and oriented preferentially in (001) plane direction, and contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less.

The present invention relates to a coating apparatus for coating a substrate of a substrate material with at least one material layer of a layer material. The present invention also relates to a process chamber for a coating apparatus for coating a substrate of a substrate material with at least one material layer of a layer material. The present invention further relates to a method of coating a substrate of a substrate material with at least one material layer of a layer material in a coating apparatus. A further aspect of the invention relates to a substrate coated with at least one material layer, comprising the substrate of a substrate material that is coated with at least one material layer of a layer material.

The present invention relates to a multilayer conductive system of metal oxides comprising: i. a substrate; ii. a layer of a crystalline binary metal oxide deposited on the substrate (i); and iii. a layer of a crystalline conductive metal oxide having a crystalline structure of perovskite type superposed over the layer of binary metal oxide (ii); the binary metal oxide of the layer (ii) having a local lattice mismatch of less than 5% with respect to that of the metal oxide of the layer (iii); provided that when the metal oxide of perovskite type of the layer (iii) is a crystalline transparent conductive metal oxide, the substrate (i) is transparent and the thickness of the crystalline binary metal oxide layer (ii) is <20 nm, preferably <10 nm, most preferentially 5-7 nm.

The invention also relates to a method for preparing the multilayer system, an electronic component comprising same, as well as to the use of the multilayer system in a variety of applications in particular in optoelectronics and solar technologies.

The invention also relates to the use of a thin layer of crystalline binary metal oxide as a seed layer for the crystal growth of a metal oxide having a crystalline structure of perovskite type, the binary metal oxide having a local lattice mismatch of less than 5% with respect to the lattice of the metal oxide of perovskite type.

The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr.sub.1-xTi.sub.x)O.sub.3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr.sub.1-yTi.sub.y)O.sub.3. In the composition formulae, x satisfies 0.10<x≤0.20, and y satisfies 0.35≤y≤0.55. The piezoelectric film (14) has tensile stress, and the piezoelectric film (15) has compressive stress.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10.sup.−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO.sub.3.

A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr.sub.1-xCa.sub.x).sub.yTiO.sub.3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.

A calcium-magnesium-alumino-silicate (CMAS)-reactive thermal barrier coating includes a ceramic coating and a CMAS-reactive overlay coating, wherein the CMAS-reactive overlay coating conforms to a surface of the ceramic coating and comprises a compound that forms a stable high melting point crystalline precipitate when reacted with molten CMAS at a rate that is competitive with CMAS infiltration kinetics into the thermal barrier coating. The ceramic coating phase is stable with the CMAS-reactive overlay coating.

A near-infrared shielding film including a continuous film of a cesium tungsten composite oxide represented by a general formula Cs.sub.xW.sub.yO.sub.z where 4.8≤x≤14.6, 20.0≤y≤26.7, 62.2≤z≤71.4, and x+y+z=100, is provided. The continuous film includes one or more crystals selected from an orthorhombic crystal, a rhombohedral crystal, and a hexagonal crystal.