Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.

An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm.sup.2; and the yttrium ingot has a relative density of greater than or equal to 96%.

The current invention describes a method of manufacturing a porous dielectric material, the method comprising (a) providing a porous template, (b) coating the porous template with an inorganic dielectric material or a precursor of an inorganic dielectric material to form a coated porous template, (c) treating the coated porous template to remove the porous template and to form a porous structure of dielectric material from the coating of inorganic dielectric material or precursor of an inorganic dielectric material, and (d) combining the formed porous structure of dielectric material with a coating polymer to form the porous dielectric material. The invention also relates to RF components on a substrate material, with a conductive material deposited on a porous dielectric material.

The process comprises treating 90-190 g titanium (IV) chloride in 10-100 ml de-ionized water for preparing Titanium cation (Ti.sup.4+); treating 130-275 ml potassium persulfate in 10-100 ml double-distilled water and keeping at constant temperature to obtain sulphate/oxide; dipping substrates into titanium (IV) chloride solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any; dipping substrates into potassium persulfate solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any, and keeping at 50-90° C. for complete one cycle; treating obtained Titanium cation (Ti.sup.4+) with sulphate/oxide and obtaining whitish layer on the substrate surface by necked eyes after about 10-15 cycles, suggesting initiation of film formation, wherein the deposition thickness of TiO.sub.2 layer is increased from 0.3-2.0-micron on determined 5-50 deposition cycles; and rinsing deposited films with de-ionized water and air annealed at 400-600° C. temperature to obtain anatase TiO.sub.2.

The process comprises treating 90-190 g titanium (IV) chloride in 10-100 ml de-ionized water for preparing Titanium cation (Ti.sup.4+); treating 130-275 ml potassium persulfate in 10-100 ml double-distilled water and keeping at constant temperature to obtain sulphate/oxide; dipping substrates into titanium (IV) chloride solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any; dipping substrates into potassium persulfate solution and re-dipping in de-ionized water to remove loosely bonded ions, if could be any, and keeping at 50-90° C. for complete one cycle; treating obtained Titanium cation (Ti.sup.4+) with sulphate/oxide and obtaining whitish layer on the substrate surface by necked eyes after about 10-15 cycles, suggesting initiation of film formation, wherein the deposition thickness of TiO.sub.2 layer is increased from 0.3-2.0-micron on determined 5-50 deposition cycles; and rinsing deposited films with de-ionized water and air annealed at 400-600° C. temperature to obtain anatase TiO.sub.2.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

A simplified switchable object and methods of making same are provided. The methods may include steps of applying a switchable material on a first surface of a first substrate, the switchable material having a thickness and a shape; applying a barrier material on the first substrate, circumferential to the switchable material; and applying a second substrate over top of, and in contact with, the switchable material and the barrier material, the first substrate, second substrate and barrier material defining a closed chamber encapsulating the switchable material. The methods may further include a step of applying a seal material.

A surface acoustic wave device includes a piezoelectric single crystal substrate and an electrode. The piezoelectric single crystal substrate is made of LiTaO.sub.3 or LiNbO.sub.3. The electrode includes a titanium film formed on the piezoelectric single crystal substrate and an aluminum film or a film containing aluminum as a main component. The aluminum film or the film is formed on the titanium film. The aluminum film or the film containing aluminum as the main component is a twin crystal film or a single crystal film, the aluminum film or the film has a (111) plane that is non-parallel to a surface of the piezoelectric single crystal substrate with an angle θ, and the aluminum film or the film has a [−1, 1, 0] direction parallel to an X-direction of a crystallographic axis of the piezoelectric single crystal substrate.

The present disclosure relates to a structural coating and preparation method and use thereof. The structural coating provided in the present disclosure includes a titanium transition layer and platinum-hafnium composite structure layers laminated in sequence on a surface of a substrate; the number of the platinum-hafnium composite structure layer is ≥3; the platinum-hafnium composite structure layer includes a hafnium layer and a platinum layer laminated in sequence.

The present disclosure relates to a structural coating and preparation method and use thereof. The structural coating provided in the present disclosure includes a titanium transition layer and platinum-hafnium composite structure layers laminated in sequence on a surface of a substrate; the number of the platinum-hafnium composite structure layer is ≥3; the platinum-hafnium composite structure layer includes a hafnium layer and a platinum layer laminated in sequence.