A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

A structure includes a substrate including a wafer or a portion thereof; and a piezoelectric bulk material layer comprising a first portion deposited onto the substrate and a second portion deposited onto the first portion, the second portion comprising an outer surface having a surface roughness (Ra) of 4.5 nm or less. Methods for depositing a piezoelectric bulk material layer include depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

The present invention relates to a method for encapsulating a nanostructure, the method comprising the steps of: providing a substrate; forming a plug composed of plug material at said substrate; forming a nanostructure (on or) at said plug; forming a shell composed of at least one shell material on external surfaces of the nanostructure, with the at least one shell material covering said nanostructure and at least some of the plug material, whereby the shell and the plug encapsulate the nanostructure. The invention further relates to a coated nanostructure and to the use of a coated nanostructure.

Methods for depositing bulk layer crystalline material having a predetermined c-axis tilt on a substrate include a first step of depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and a second step of depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.

Bulk acoustic wave resonator structures include a bulk layer with inclined c-axis hexagonal crystal structure piezoelectric material supported by a substrate. The bulk layer may be prepared without first depositing a seed layer on the substrate. The bulk material layer has a c-axis tilt of about 32 degrees or greater. The bulk material layer may exhibit a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation. A method for preparing a crystalline bulk layer having a c-axis tilt includes depositing a bulk material layer directly onto a substrate at an off-normal incidence. The deposition conditions may include a pressure of less than 5 mTorr and a deposition angle of about 35 degrees to about 85 degrees.

The invention relates to an item comprising a substrate having at least one first main surface coated with an organic-inorganic layer of a material obtained by vacuum deposition of at least one metal oxide B, preferably having a refraction index no higher than 1.53, and at least one organic compound, said layer having a refractive index no higher than 1.45, and said metal oxide having been deposited by oblique angle deposition.

The present application provides a light emitting device and a manufacturing method for the same. The light emitting device includes a substrate and an anode structure disposed on the substrate, which is formed by depositing particles on a surface of the substrate through a deposition source. During the process of the anode structure, the substrate is disposed obliquely with respect to the deposition source such that the particles of the functional film layers of the anode structure are arranged in a fixed direction, thereby increasing the work function of the anode structure.

A Coating, a system of coatings and a method to produce thin film coating, deposited by a stream of particles, produced by thermal evaporation or magnetron/ion-beam sputtering, wherein the thin film coating comprises at least 3 distinct refractive index layers, out of a single target (10) material. In the process of the coating, vapor flux or particle stream is pointed obliquely to the uncovered surface of the substrate (1), which can be rotated about an axis (12), parallel to the surface of the substrate. The substrates can also be rotated about an axis (16), co-aligned with the normal vector of the substrate, to obtain an evenly deposited coating with the desired amorphous structure. The structure of the coating is selected in a pattern, which allows the porosity in-between adjacent layers to be varied. As a consequence, achieving a reflectance of the coating of at least 90% for at least one frequency radiation or polarization component.