Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from each other. The carbon nanotube film structure is heated to gasify the organic semiconductor material to form the organic semiconductor layer on a depositing surface.

The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.

An evaporation source for organic material is described. The evaporation source includes an evaporation crucible, wherein the evaporation crucible is configured to evaporate the organic material; a distribution pipe with one or more outlets, wherein the distribution pipe is in fluid communication with the evaporation crucible and wherein the distribution pipe is rotatable around an axis during evaporation; and a support for the distribution pipe, wherein the support is connectable to a first drive or includes the first drive, wherein the first drive is configured for a translational movement of the support and the distribution pipe.

The present invention relates to a method for controlling an evaporation rate of source material (20) in a system (10) for thermal evaporation with electromagnetic radiation (120), wherein the system (10) comprises an electromagnetic radiation source (110) for providing an electromagnetic radiation (120), a vacuum chamber (12) containing a reaction atmosphere (16) and a main detector (40, 100) for measuring electromagnetic radiation (120), wherein a source material (20) and a target material (18) to be coated are arranged in the vacuum chamber (12) and the electromagnetic radiation source (110) is arranged such that its electromagnetic radiation (120) impinges at an angle, preferably at an angle of 45°, on a source surface (22) of the source material (20) for a thermal evaporation and/or sublimation of the source material (20) below the plasma threshold, and wherein the main detector (40, 100) for measuring electromagnetic radiation (120) is arranged such that electromagnetic radiation (120) reflected on the source surface (22) reaches the main detector (40, 100), further wherein the source material (20) is provided by a source element (24), wherein the source surface (22) is located accessible for the electromagnetic radiation (120) at the source element (24), whereby the source element (24) is arranged in a holding structure (28) and movable by the holding structure (28) perpendicular to the source surface (22). Further, the present invention relates to a detector (40) for measuring electromagnetic radiation (120), the detector (40) preferably suitable for a method according to the present invention, and additionally to a system (10) for thermal evaporation with electromagnetic radiation (120) suitable for the method according to the present invention.

Examples of a device for gettering and surface conditioning are disclosed. The device comprises an elongated tube with a closed first end, a second end and a body extending between the first end and the second end. The body defines an inner cavity of the tube in which a heating device is inserted. The tube is inserted into a vessel so that the first end is positioned within the vessel. A solid metal is mounted closely to the tube in a region surrounding the heating device and a meshed screen is mounted over the solid metal and secured to the tube. When the heating device is on, the heat transfers through the tube's wall into the solid metal melting and vaporizing it, so that the metal vapors travel and coat onto vessel's surfaces. The device can also be used in producing metal alloys such as lead lithium alloys.

A bulk SiC single crystal is produced by placing an SiC seed crystal in a crystal growth region of a growth crucible, and introducing SiC source material into an SiC reservoir region, and the bulk SiC single crystal is grown on from an SiC growth gas phase by deposition. The growth crucible is surrounded by an insulation that extends rotationally symmetrically and axially towards the central middle longitudinal axis. The insulation has mutually concentric insulation cylinder components and the insulation is notionally divided into insulation ring segments that are in turn notionally divided into volume elements. The insulation cylinder components are selected and positioned relative to one another such that every volume element of the insulation ring segment in question has a volume element density varying by not more than 10% from an average insulation ring segment density of the insulation ring segment in question.

A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.

A material deposition arrangement for depositing evaporated material on a substrate in a vacuum chamber is described. The material deposition arrangement includes a crucible for providing material to be evaporated; a linear distribution pipe in fluid communication with the crucible; and a plurality of nozzles in the distribution pipe for guiding the evaporated material into the vacuum chamber. Each nozzle may have a nozzle inlet for receiving the evaporated material, a nozzle outlet for releasing the evaporated material to the vacuum chamber, and a nozzle passage between the nozzle inlet and the nozzle outlet. The nozzle passage of at least one of the plurality of nozzles includes a first section having a first length and a first size, and a second having a second length and a second size. The ratio of the second size to the first size is between 2 and 10.

An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.