Provided is a plated steel plate used for interior materials and exterior materials such as home appliances, construction materials, vehicles, etc., and a method for manufacturing same. The plated sheet plate includes: base steel; a Zn—Mg plating layer formed on the base steel; and a UV-curable film layer formed on the Zn—Mg plating layer, wherein a hairline pattern is formed on a surface of the Zn—Mg plating layer, and the Zn—Mg plating layer includes 8 to 27 weight % of Mg and a balance of Zn and inevitable impurities.

Provided are thin leaf-like indium particles having a first peak and a second peak at a greater particle diameter than a particle diameter at which the first peak appears in a volume-based particle size distribution representing a relationship between particle diameters of indium particles and ratios by volume of the indium particles at the particle diameters, wherein a volume V1 of the indium particles at the first peak and a volume V2 of the indium particles at the second peak satisfy a formula (V1/V2)×100≥25%.

The invention relates to a system for controlling evaporator boats, having a fixture (16) for receiving a plurality of evaporator boats (14), an energy source (18) for providing energy for heating each of the evaporator boats (14), a supply wire drive (24) for each of the evaporator boats (14), at least one camera (32) adapted for capturing an image of at least one of a plurality of evaporator boats (14) mounted in the fixture (16), and a control (26), the control (26) having an image analyzation module (36) and being adapted for providing a control signal for the supply wire drive (24) and a control signal for the energy source (18), the control signals depending at least in part from an output of the image analyzation module (36). The invention further relates to a PVD machine and to a method of operating the machine.

The invention relates to a system for controlling evaporator boats, having a fixture (16) for receiving a plurality of evaporator boats (14), an energy source (18) for providing energy for heating each of the evaporator boats (14), a supply wire drive (24) for each of the evaporator boats (14), at least one camera (32) adapted for capturing an image of at least one of a plurality of evaporator boats (14) mounted in the fixture (16), and a control (26), the control (26) having an image analyzation module (36) and being adapted for providing a control signal for the supply wire drive (24) and a control signal for the energy source (18), the control signals depending at least in part from an output of the image analyzation module (36). The invention further relates to a PVD machine and to a method of operating the machine.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a Pbs thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level Pbs photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The Pbs photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a Pbs Mega-pixel-level array imaging system.

Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a Pbs thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level Pbs photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The Pbs photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones. The corresponding non-uniformity in a wafer-level photosensitive surface is <5%, satisfying the requirements of preparation of a Pbs Mega-pixel-level array imaging system.

A crucible for flash evaporation of a liquid material is described. The crucible includes one or more sidewalls and a reservoir portion below the one or more sidewalls, the reservoir portion of having a first cross-section of a first size and a second cross-section above the first cross-section of a second size, the second size being larger than the first size.

Provided are a zinc alloy plated steel and a method for manufacturing same, the zinc alloy plated steel comprising: a base iron; a Zn plated layer formed on top of the base iron; and a Zn—Mg alloy layer formed on top of the Zn plated layer and obtained through mutual diffusion of Zn and Mg, wherein the ratio of the weight of Mg contained in the Zn—Mg alloy layer with respect to the total weight of the Zn plated layer and the Zn—Mg alloy layer is 0.13 to 0.24, and the sum of the adhesion quantity of the Zn layer and the Zn—Mg alloy layer is no more than 40 g/m.sup.2 (more than 0 g/m.sup.2).

Provided are a zinc alloy plated steel and a method for manufacturing same, the zinc alloy plated steel comprising: a base iron; a Zn plated layer formed on top of the base iron; and a Zn—Mg alloy layer formed on top of the Zn plated layer and obtained through mutual diffusion of Zn and Mg, wherein the ratio of the weight of Mg contained in the Zn—Mg alloy layer with respect to the total weight of the Zn plated layer and the Zn—Mg alloy layer is 0.13 to 0.24, and the sum of the adhesion quantity of the Zn layer and the Zn—Mg alloy layer is no more than 40 g/m.sup.2 (more than 0 g/m.sup.2).

The present disclosure generally relates to a substrate processing chamber, a substrate processing apparatus, and a substrate processing method for self-assembled monolayer (SAM) deposition of low vapor pressure organic molecules (OM) followed by further substrate processing, such as atomic layer deposition.