Amorphous tungsten nitride compounds, products, and methods of manufacture, as well as devices incorporating the same are disclosed herein. An example electro-mechanical device includes a first gate, a first drain, and a source having a completely amorphous metal tungsten nitride film cantilever. The cantilever extends from an anchor of the source transversely to the first gate and the first drain.

An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO.sub.2, SiO.sub.x, SiO.sub.xN.sub.y, a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO.sub.2 as the low index layers.

A process kit for use in a deposition chamber comprises a parent part and a disposable insert. The parent part receives the disposable insert to form a complete process kit. The disposable insert prevents the contact of any surface of the parent part to a deposited thin film A portion of an inner surface of the disposable insert comprises a plurality of recesses where the density of the plurality of recesses is proportional to the amount of the deposited thin film that accumulates on the portion of an inner surface when in use.

A window film is disclosed. The window film includes: a flexible transparent base material; a first metal target material film, disposed on the surface of the flexible transparent base material; a first high refractive index compound film, disposed on the surface of the first metal target material film; a first metal oxide film, disposed on the surface of the first high refractive index compound film; a first silver-containing metal film, disposed on the surface of the first metal oxide film; a second metal target material film, disposed on the surface of the first silver-containing metal film; and a second high refractive index compound film, disposed on the surface of the second metal target material film. The window film has better adherence, and is less likely to peel off. In addition, the window film also has better oxidation resistance, and is less likely to be oxidized. Furthermore, the window film also has a better optical effect and heat insulation effect.

A racetrack-shaped apparatus for generating a magnetic field on a target surface for magnetron sputtering, comprising on a magnetic base (a) a vertically magnetized center permanent magnet arranged straight; (b) vertically magnetized peripheral permanent magnets surrounding the center permanent magnet; (c) vertically magnetized first intermediate permanent magnets, horizontally magnetized second intermediate permanent magnets and vertically magnetized third intermediate permanent magnets arranged on both sides of the center permanent magnet; and (d) vertically magnetized fourth intermediate permanent magnets arranged separately from both longitudinal ends of the center permanent magnet; each second intermediate permanent magnet being arranged with one magnetic pole opposing a near-target side surface portion of each first intermediate permanent magnet.

A film formation apparatus includes a chamber that is a sealed container in which a target formed of a film formation material is placed, and into which the workpiece is carried, a gas discharging unit discharging a gas in the sealed container for a predetermined time period after the workpiece is carried into the chamber to obtain a base pressure, and a sputter gas introducing unit introducing a sputter gas containing oxygen to the interior of the chamber having undergone the discharging and becoming the base pressure. The sputter gas introducing unit decreases an oxygen partial pressure in the sputter gas to be introduced in the chamber in accordance with an increase in the base pressure due to an increase of the film formation material sticking to the interior of the chamber.

Provided is a method for manufacturing an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration by a sputtering method. The method comprises the steps of cleaving pellets and aggregates of atoms from a sputtering target containing indium, an element M (aluminum, gallium, yttrium, or tin), and zinc, depositing the pellets and the aggregates of atoms on a substrate, and then filling a gap between the pellets by the aggregates of atoms with lateral growths.

A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N.sub.2), He, Ne, and combinations thereof.

A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.