A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N.sub.2), He, Ne, and combinations thereof.

The light transmitting film includes a transparent substrate and a light transmitting inorganic layer in this order. The transparent substrate is composed of a polymer film. The light transmitting inorganic layer includes, in this order, a first inorganic oxide layer, a metal layer, and a second inorganic oxide layer. The light transmitting inorganic layer has conductivity, the first inorganic oxide layer and the second inorganic oxide layer contain hydrogen atoms. The ratio (H2/H1) of hydrogen atom content H2 of the second inorganic oxide layer relative to the hydrogen atom content H1 of the first inorganic oxide layer is 0.10 or more and 10.00 or less.

The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 110.sup.18 cm.sup.3. The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 110.sup.18 cm.sup.3, (II) a strontium niobium oxynitride film having carrier density not more than 110.sup.18 cm.sup.3, (III) a photosemiconductor substrate comprising the strontium niobium oxynitride film, (IV) a hydrogen generation device comprising the photosemiconductor substrate, and (V) a hydrogen generation method using the photosemiconductor substrate. The present invention provides a fabrication method of a strontium niobium oxynitride film having small carrier density and its use.

A racetrack-shaped apparatus for generating a magnetic field on a target surface for magnetron sputtering, comprising on a magnetic base (a) a vertically magnetized center permanent magnet arranged straight; (b) vertically magnetized peripheral permanent magnets surrounding the center permanent magnet; (c) vertically magnetized first intermediate permanent magnets, horizontally magnetized second intermediate permanent magnets and vertically magnetized third intermediate permanent magnets arranged on both sides of the center permanent magnet; and (d) vertically magnetized fourth intermediate permanent magnets arranged separately from both longitudinal ends of the center permanent magnet; each second intermediate permanent magnet being arranged with one magnetic pole opposing a near-target side surface portion of each first intermediate permanent magnet.

An optical filter including at least one of a high refractive index material and a low refractive index material; wherein the optical filter exhibits a reduced angle shift in at least one of a visible, near infrared, and an extreme ultraviolet wavelength is disclosed. A method of depositing a film is also disclosed.

Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal atomic arrangement in the case of a single crystal. The oxide has a homologous structure of indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The oxide has a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide. In a Voronoi diagram having a plurality of Voronoi regions obtained through a Voronoi analysis of the lattice point group, a proportion of hexagonal Voronoi regions is higher than or equal to 78% and lower than or equal to 100%.

Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal atomic arrangement in the case of a single crystal. The oxide has a homologous structure of indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The oxide has a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide. In a Voronoi diagram having a plurality of Voronoi regions obtained through a Voronoi analysis of the lattice point group, a proportion of hexagonal Voronoi regions is higher than or equal to 78% and lower than or equal to 100%.

A gas barrier film including a polymer base, an undercoat layer that contains, as the main component, an acrylic resin having at least one side chain selected from the group consisting of the side chains (I) to (III) mentioned below, and an inorganic layer, wherein the undercoat layer and the inorganic layer are arranged in this order on at least one surface of the polymer base in such a manner that the undercoat layer and the inorganic layer are in contact with each other: (I) a side chain having an acrylic polymer skeleton; (II) a side chain having a dimethylsiloxane skeleton; and (III) a side chain having a skeleton containing a fluorine atom.

The present disclosure related to a thin metal film substrate and a method for preparing the same and more particularly, to a thin metal film substrate including a substrate; and a thin metal film comprising Ag or an Ag alloy formed on the substrate, wherein the thin metal film is formed to have preferred orientation corresponding to the preferred orientation of the substrate during the initial growth. The thin metal film substrate according to an example grows in a 2D continuous thin film from the initial growth to provide excellent light transmittance and conductivity.

A wire grid polarizer plate includes a transparent substrate, metal partition walls and metal oxide partition walls. The metal partition walls are disposed on the transparent substrate and spaced apart from one another. The metal partition walls includes at least one metal selected from aluminum (Al), titan (Ti), molybdenum (Mo), chrome (Cr), silver (Ag), copper (Cu), nickel (Ni) and cobalt (Co). The metal oxide partition walls are disposed on the metal partition walls. The metal oxide partition walls includes an oxide of the at least one metal. An average of surface roughness of the wire grid polarizer plate is about 4 nm or less when a thickness of the metal oxide partition walls is equal to about 300 .