Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.

A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses.

A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.

The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CIGS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.

A thin film X.sub.yAl.sub.(1-y)N alloy preferably deposited with an intrinsic tensile stress significantly enhances the piezoelectric properties of AlN. The alloy contains y percent of the compound XN, where X is selected from the group consisting of Yb, Ho, Dy, Lu, Tm, Tb, and Gd. The percentage of XN preferably lies in the range 10-60%, and the stress is preferably in the range 200 MPa-1.5 GPa. The film is useful in MEMS devices.

A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. quartz, fused silica, silicon, glass, toughened glass, PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.

Embodiments relate to a sputter chamber comprising both a target surface and an anode surface. The sputter chamber has both an ingress and an egress to allow passage of a gas. The sputter chamber further includes a target substrate. A secondary material flexibly changes the composition of the target substrate in-situ by changing coverage of the target by the secondary material. Gas entering the sputter chamber interacts with the changed composition of the target. The interaction discharges a plasma alloy and the alloy condenses on the anode surface in the sputter chamber. The condensed alloy produces an alloy film.

A negative thermal expansion material and a preparation method thereof, and a negative thermal expansion film and a preparation method thereof are provided. The negative thermal expansion material includes Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, wherein 0≤δ≤2.

According to one embodiment, a film formation apparatus includes a chamber having an interior to be vacuumed, a carrying unit which is provided in the chamber, and which carries a workpiece that has a processing target surface in a solid shape along a circular carrying path, a film formation unit that causes a film formation material to be deposited by sputtering on the workpiece that is being carried by the carrying unit to form a film thereon, and a shielding member which has an opening located at a side where the workpiece passes through, and which forms a film formation chamber where the film formation by the film formation unit is performed. A compensation plate that protrudes in the film formation chamber is provided, and the compensation plate has a solid shape along a shape of the processing target surface of the workpiece, and is provided at a position facing the workpiece.