Negative thermal expansion material, negative thermal expansion film and preparation method thereof

Abstract

A negative thermal expansion material and a preparation method thereof, and a negative thermal expansion film and a preparation method thereof are provided. The negative thermal expansion material includes Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, wherein 0≤δ≤2.

Claims

1. A negative thermal expansion film, comprising a negative thermal expansion material, wherein the negative thermal expansion material comprises Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, 0≤δ≤2.

2. A zero expansion composite film, comprising the negative thermal expansion film of claim 1.

3. An integrated circuit board, comprising the negative thermal expansion film of claim 1.

4. A negative thermal expansion film, comprising a negative thermal expansion material, wherein the negative thermal expansion material comprises Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, 0≤δ≤2, and the negative thermal expansion material is formed from Eu.sub.2O.sub.3, CuO and Mn.sub.2O.sub.3 powders by using a solid state sintering method.

5. A zero expansion composite film, comprising the negative thermal expansion film of claim 4.

6. An integrated circuit board, comprising the negative thermal expansion film of claim 4.

7. A method for preparing a negative thermal expansion film comprising a negative thermal expansion material comprising Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, 0≤δ≤2, the method comprising: preparing an Eu.sub.2O.sub.3 target, a CuO target, and an Mn.sub.2O.sub.3 target, respectively; providing a substrate; placing the Eu.sub.2O.sub.3 target, the CuO target, the Mn.sub.2O.sub.3 target and the substrate in a reaction chamber; depositing Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 film on the substrate by bombarding the targets, wherein the molar ratio of Eu, Cu and Mn is controlled to be 0.85:0.15:1; and maintaining the film deposited at a temperature above 1073K.

8. The method for preparing a negative thermal expansion film according to claim 7, wherein the targets are bombarded by one of a radio frequency magnetron sputtering method and a pulsed laser method.

9. The method for preparing a negative thermal expansion film according to claim 7, wherein the molar ratio of Eu, Cu, and Mn is controlled by controlling deposition time of the film.

10. The method for preparing a negative thermal expansion film according to claim 9, wherein the targets are bombarded by one of a radio frequency magnetron sputtering method and a pulsed laser method.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a graph of expansion ratio of EuMnO.sub.3 material as a function of temperature.

(2) FIG. 2 is a graph of expansion ratio of Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ material of an embodiment of the present disclosure as a function of temperature.

(3) FIG. 3 is a graph of energy spectrum analysis of a prepared material of an embodiment of the present disclosure.

DETAILED DESCRIPTION

(4) The present disclosure will be further described in detail below in conjunction with the drawings and embodiments. It is understood that specific embodiments described herein are merely illustrative of the present disclosure and are not intended to be limiting. In addition, it should be noted that, for the convenience of description, only some but not all of the structures related to the present disclosure are shown in the drawings.

(5) According to an exemplary embodiment of the present disclosure, a negative thermal expansion material is provided, including Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, wherein 0≤δ≤2.

(6) The negative thermal expansion material refers to a class of compounds whose average linear expansion coefficient or body expansion coefficient is negative within a certain temperature range, and is an emerging branch of discipline in material science in recent years. They can be classified into three types according to their crystallographic characteristics and negative thermal expansion properties: isotropic negative thermal expansion materials, anisotropic negative thermal expansion materials, and unshaped materials. The negative thermal expansion material is characterized by measuring the size of the material in a certain direction or in respective directions at different temperatures. In the case of an increase in temperature, a decrease in the size of the material indicates that the material is undergoing negative expansion, so it is called a negative thermal expansion material. The negative thermal expansion material can be combined with a general positive thermal expansion material to prepare a controllable coefficient of thermal expansion or a zero expansion material.

(7) In one implementation, the negative thermal expansion material is formed from Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 powders by using a solid state sintering method.

(8) In the negative thermal expansion material, the correlation vibration between metal and oxygen atoms at a high temperature in the original material is changed by doping the EuMnO.sub.3 with Cu.sup.2+ ions, and as a result, the unit cell volume of the material is reduced, thereby making the negative thermal expansion material with negative thermal expansion property.

(9) FIG. 1 is a graph of expansion ratio of EuMnO.sub.3 material as a function of temperature. FIG. 2 is a graph of expansion ratio of Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ material as a function of temperature.

(10) As shown in FIG. 1, the arrow 101 in FIG. 1 indicates that the temperature is increasing, and the expansion ratio of the EuMnO.sub.3 material gradually increases with temperature, and the coefficient of thermal expansion α of EuMnO.sub.3 is 2.77×10.sup.−6 by curve fitting.

(11) As shown in FIG. 2, the arrow 201 in FIG. 2 indicates that the temperature is increasing, and the expansion ratio of Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ material gradually decreases with the increase of temperature, and the coefficient of thermal expansion α of Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ is −6.14×10.sup.−6 by curve fitting. It can be seen that the Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ material is a negative thermal expansion material.

(12) As for the negative thermal expansion material provided by the embodiment, the copper in Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ is doped in the form of copper ions, thereby realizing the negative expansion of the material when the temperature is increasing, which has wide application.

(13) According to an exemplary embodiment of the present disclosure, a method for preparing a negative thermal expansion material is provided, including the following steps:

(14) preparing Eu.sub.2O.sub.3 power, CuO power and Mn.sub.2O.sub.3 power, respectively; proportioning the Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 powders in a molar ratio of Eu:Cu:Mn=0.85:0.15:1; mixing the powers; drying the powers mixed; molding the powder dried by pressing; sintering the powders molded by pressing at a temperature above 1073K.

(15) Specifically, the method for preparing the negative thermal expansion material according to the embodiment includes the following two main processes.

(16) (1) Preparation of Raw Materials

(17) The raw materials are analytically pure Eu.sub.2O.sub.3 (purity≥99.5%), CuO (purity≥99.5%) and Mn.sub.2O.sub.3 powder. The Mn.sub.2O.sub.3 powder is prepared by keeping the analytically pure MnO.sub.2 (purity≥99.5%) powder in a box furnace at 650° C. for 10 hours.

(18) (2) Preparation of Sample

(19) The Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 powers are proportioned in a molar ratio of Eu:Cu:Mn=0.85:0.15:1; firstly the Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 powers are dry grinded in an agate mortar for 0.5 hours to 1.5 hours, optionally for 1 hour, and then are grinded for 0.5 hours to 1.5 hours, optionally 1 hour, with adding of anhydrous ethanol, and then are dried in a drying oven at a temperature of 353 K for 1 hour. The Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 powers are pressed into a disc-shaped semifinished base (Φ 10×5 mm) by a powder tableting machine. The semifinished base is put into the high-temperature furnace and heated from room temperature (about 293K) to 1173 K to 1373K (optionally about 1273K) at a heating rate of 3 K/min to 8K/min (optionally about 5 K/min), and then the temperature is maintained for 10 hours to 24 hours. Finally, the temperature is naturally dropped to room temperature to obtain the sample.

(20) FIG. 3 is a graph of energy spectrum analysis of a prepared material according to the present embodiment. As shown in FIG. 3, the composition of the obtained material is Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ. The composition of the obtained material can be determined by energy spectrum analysis, and then the content of each powder in the sample preparation can be adjusted to obtain a material with the desired composition.

(21) In the method of preparing a negative thermal expansion material provided by the embodiment, the copper in Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ is doped in the form of copper ions, thereby realizing the negative expansion of the material when the temperature is increasing. Also, the preparation method is simple and the cost is low.

(22) According to an exemplary embodiment of the present disclosure, a negative thermal expansion film with the same composition as the material of the above embodiment is provided, except that the material is formed into a film, which is advantageous for wider application of the material. The film includes the negative thermal expansion material of Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ, wherein 0≤δ≤2.

(23) The negative thermal expansion film in the embodiment can be prepared by a radio frequency magnetron sputtering method or a pulsed laser deposition method.

(24) In the negative thermal expansion film provided by the embodiment, the copper in Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ is doped in the form of copper ions, thereby realizing the negative expansion of the film when the temperature is increasing, which has wide application.

(25) According to an exemplary embodiment of the present disclosure, a method for preparing a negative thermal expansion film is provided, including the following steps:

(26) preparing an Eu.sub.2O.sub.3 target, a CuO target, and an Mn.sub.2O.sub.3 target, respectively; providing a substrate; placing the Eu.sub.2O.sub.3 target, the CuO target, the Mn.sub.2O.sub.3 target and the substrate in a reaction chamber; depositing Eu.sub.2O.sub.3, CuO, and Mn.sub.2O.sub.3 film on the substrate by bombarding the targets, wherein the molar ratio of Eu, Cu and Mn is controlled to be 0.85:0.15:1; and maintaining the film deposited at a temperature above 1073K.

(27) The bombarding the targets includes using the radio frequency magnetron sputtering method or the pulsed laser method to bombard the targets.

(28) When the radio frequency magnetron sputtering method is used to bombard the targets, the process parameters for depositing Eu.sub.2O.sub.3, CuO and Mn.sub.2O.sub.3 film on the substrate can be the parameters used in common magnetron sputtering, for example, the radio frequency deposition power is 150 W˜300 W, the vacuum degree is 1.0×10.sup.−3 Pa˜2.0×10.sup.−4 Pa, the working pressure is 1 Pa˜3 Pa, the working atmosphere is a mixed gas of argon and oxygen, and the deposition time is 60 minutes to 240 minutes. During the deposition process, the amount of Eu.sub.2O.sub.3, CuO and Mn.sub.2O.sub.3 is controlled by controlling the deposition time, thereby controlling the molar ratio of bismuth, copper and manganese in the film obtained by deposition on the substrate.

(29) When the pulsed laser method is used to bombard the targets, the process parameters of depositing Eu.sub.2O.sub.3, CuO and Mn.sub.2O.sub.3 film on the substrate can be the parameters used in common pulsed laser method, for example, the vacuum degree is 1.0×10.sup.−3 Pa to 2.0×10.sup.−4 Pa, the working pressure is 2 Pa˜20 Pa, the working atmosphere is high purity oxygen, the laser energy density after focusing is 300 mJ/cm.sup.2˜500 mJ/cm.sup.2, the pulse width is 5 ns˜30 ns, the pulse frequency is 5 Hz, the deposition time is 30 minutes˜60 Minutes. During the deposition process, the amount of Eu.sub.2O.sub.3, CuO and Mn.sub.2O.sub.3 is controlled by controlling the deposition time, thereby controlling the molar ratio of bismuth, copper and manganese in the film obtained by deposition on the substrate.

(30) In the method for preparing a negative thermal expansion film provided by the present embodiment, the copper in Eu.sub.0.85Cu.sub.0.15MnO.sub.3-δ is doped in the form of copper ions, thereby realizing the negative expansion of the film material when the temperature is increasing, which has a wide application. Also, the preparation method is simple and the cost is low.

(31) According to an exemplary embodiment of the present disclosure, a zero expansion material is provided, including the negative thermal expansion material as described in the above embodiments. The zero expansion material may include a positive thermal expansion material in addition to the negative thermal expansion material. The material with zero expansion at a high temperature is obtained by adjusting the composition relationship of the negative thermal expansion material and the positive thermal expansion material according to the expansion ratios thereof.

(32) According to an exemplary embodiment of the present disclosure, a zero-expansion composite film is provided including the negative thermal expansion film as described in the above embodiments. The zero expansion composite film may include a positive thermal expansion material film in addition to the negative thermal expansion material film. The film with zero expansion at a high temperature is obtained by adjusting the composition relationship of the negative thermal expansion material film and the positive thermal expansion material film according to the expansion ratios thereof.

(33) According to an exemplary embodiment of the present disclosure, an integrated circuit board including the negative thermal expansion film described in the above embodiments is provided.

(34) The negative thermal expansion film provided by the present disclosure can be used in a wide variety of applications. For example, the negative thermal expansion film may be used as coating materials used on the surface of high-precision optical lens, to effectively reduce measurement inaccuracies caused by the increasing temperature. The negative thermal expansion film can further be applied for reflection grating to effectively reduce the measurement error and improve the measurement accuracy. The negative thermal expansion film can also be used in the biomedical industry. The adjustable thermal expansion materials are often applied to artificial teeth or bones, making it easy to form medical equipment with high expansion requirements along with other materials. In addition, in the field of electronics industry, the requirements for precision are very high. Usually, the thermal expansion material and crystalline silicon can be combined with a certain proportion to adjust the expansion coefficient of single crystal silicon in the integrated circuit board without affecting the performance of crystalline silicon.

(35) It will be understood by those skilled in the art that the present disclosure is not limited to the specific embodiments described herein, and that various obvious modifications, readjustment and substitutions may be made by those skilled in the art without departing from the protection scope of the present disclosure. Therefore, the present disclosure has been described in detail by the above embodiments, but the present disclosure is not limited to the above embodiments. The present disclosure may include more other equivalent embodiments without departing from the present disclosure. The scope of the present disclosure is determined by the appended claims.