Patent classifications
C23C14/3464
Sputtering device
The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.
COATED SUBSTRATES AND METHODS FOR THE PREPARATION THEREOF
The present application relates to methods of preparing a coated substrate and coated substrates which can be optionally prepared from such methods. The methods comprise depositing on the substrate a single abrasion resistant layer by magnetron sputtering or depositing on the substrate a dual layer comprising a first abrasion resistant layer deposited by magnetron sputtering and a second abrasion resistant layer deposited by plasma-enhanced chemical vapor deposition.
APPARATUS AND METHOD FOR FABRICATING PVD PEROVSKITE FILMS
Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition within a processing chamber; depositing a second perovskite film layer over the first perovskite film layer using multi-cathode sputtering deposition within a processing chamber; and annealing the substrate with the first perovskite film layer and second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.
COATED TOOL WITH COATING COMPRISING BORIDE-CONTAINING DIFFUSION BARRIER LAYER
Coated tool comprising a coated surface, the coated surface comprising a substrate having a surface on which a coating is deposited, wherein the substrate is made of a material comprising cobalt, and wherein the coating comprises at least one boron-comprising layer, wherein the at least one boron-comprising layer comprises Al and the boron comprised in this layer is present as boride, thereby the boron-comprising layer is able to form further layers for providing a diffusion barrier layer effect, in particular for stopping diffusion of cobalt from the substrate surface to the coating, when the coated tool or the coated surface is exposed to temperatures in a range between approximately 600 and 1200° C.
RAZOR BLADES WITH CHROMIUM BORIDE-BASED COATINGS
This invention relates to a novel application of a compound of chromium and boron, or the application of chromium boride-based coatings (e.g., CrB.sub.n where an atomic percentage of boron ranges from greater than zero atomic percent to less than 100 atomic percent of said compound) to surfaces of razor blades, namely cutting edges. On razor blade edges, these novel coatings are hard, durable, and provide a novel, low cutter force and high-quality coating structure, elevating blade performance, while also simplifying the manufacturing process.
Sputtering apparatus and method for fabricating semiconductor device using the same
A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.
PVD target design and semiconductor devices formed using the same
A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.
PREPARING METHOD OF TWO-DIMENSIONAL MATERIALS WITH CONTROLLED NUMBER OF LAYERS
The present disclosure relates to a preparing method of two-dimensional materials with a controlled number of layer including depositing a metal thin film on a surface of a bulk material; exfoliating a two-dimensional material from the surface of the bulk material together with the metal thin film; and transferring the two-dimensional material onto a substrate, in which the number of layers of the two-dimensional material to be exploited is controlled by controlling an internal stress of the metal thin film.
SPUTTERING SYSTEM
A sputtering system is suitable for sputtering a surface to be sputtered having sections. Each section has a projection height. The sputtering system includes a supporting plate, a sputtering array, and a controller. The sputtering array is arranged on the supporting plate. The sputtering array includes sputtering units. Each section corresponds to at least one of the sputtering units. Each sputtering unit has a driving shaft and a target. The target faces the surface to be sputtered. The controller is electrically connected the driving shaft. The driving shaft drives the target to move relative to the surface to be sputtered. The controller controls a distance between each sputtering unit and the corresponding section of the sections in the direction of the projection height to satisfy a given condition.
Method for producing optical film
In a preliminary deposition for producing an optical film in which multilayered optical thin-film is formed on a film substrate, a plurality of sputtering chambers are simultaneously energized to deposit a stacked body of thin-films made of two or more different materials on the film substrate, and the thicknesses of the plurality of thin-films are calculated from the optical properties obtained by the optical measuring unit (80) equipped in a sputtering apparatus. Measurement of the thicknesses and adjusting the deposition conditions for thin-films are repeated until the optical properties obtained by the optical measurement unit or the thickness of the respective thin-films calculated from the optical properties falls within a prescribed range.