A method of forming a layer of a cathode is provided. The method includes generating a plasma remote from one or more sputter targets, sputtering material from the target or targets using the plasma, and depositing the sputtered material on the substrate to which a bias voltage has been applied, thereby forming the layer of cathode.

A substrate fixing device includes a first supporter supporting at least one substrate and a second supporter connected to the first supporter, making contact with a first surface and a second surface of the at least one substrate in a first direction, and vertically fixing the at least one substrate such that a third surface faces a normal line direction of the first supporter. The second supporter defines a deposition surface including the third surface, a portion of the first surface adjacent to the third surface, and a portion of the second surface adjacent to the third surface in the at least one substrate and exposes the defined deposition surface to the deposition processing space. A deposition processing equipment including the substrate fixing device and a deposition processing method using the deposition processing equipment are also provided.

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and/or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten titanium molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and/or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten titanium molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

A substrate processing apparatus for performing a predetermined processing on a substrate includes a power supply device configured to supply a DC power. The power supply device includes a power supply and a current detection unit configured to detect a current value of a DC power from the power supply. The current detection unit includes a plurality of current sensors used for detecting the current value in the current detection unit and having different detection ranges for the current value, and a switching unit configured to switch the current sensors. The power supply is controlled such that the DC power from the power supply is maintained at a set value based on a detection result of the current detection unit, and the switching unit switches the current sensors depending on the set value of the DC power from the power supply.

Disclosed is a deposition apparatus for a substrate, in particular, a deposition apparatus for both lateral portions of a substrate, in which at least one substrate is inserted in and mounted to a revolvably disposed substrate mounting drum in a direction from an outside circumferential surface toward an inside circumferential surface, one lateral portion of the substrate exposed protruding from an inside circumferential surface is subjected to deposition based on an inside source target, and the other lateral portion of the substrate exposed protruding from an outside circumferential surface is subjected to deposition based on an outside source target, thereby depositing wiring to both lateral portions of the substrate at once, and achieving a three-dimensional (3D) deposition improved in uniformity and quality.

Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.

Embodiments of the present disclosure relate to optical device films and methods of forming optical device films. Specifically, embodiments described herein provide for an optical device film having a constant oxygen-concentration, a first concentration profile of the first material, and a second concentration profile of the second material. The first material, described and referenced to herein, has a first refractive index about 2.0 or greater and the second material has a second refractive index less than 2.0.

A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member. The fixed member contains at least one of an oxide and a nitride.

The present invention relates to an inorganic alignment film forming apparatus for forming an inorganic alignment film on a substrate, the apparatus comprising: a sputtering means; and an ion beam irradiation means for performing surface treatment on an inorganic alignment film formed by the sputtering means, wherein the sputtering means comprises a stage on which a substrate for forming the inorganic alignment film is arranged, at least one sputtering gun, and a sputtering mask arranged between the stage and the sputtering gun, the ion beam irradiation means comprises a stage on which the substrate is arranged, an ion beam emission unit for generating ions and irradiating the substrate with ions, and an ion beam irradiation mask arranged between the stage and the ion beam emission unit, and the sputtering mask and the ion beam irradiation mask have a plurality of inclined opening parts.