Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid element selected from In, Al, Sr, and Si, an oxide of the metal or metalloid element, or a nitride of the metal or metalloid element.

A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.

The color of an electrochromic stack in a tinted state may be modified to achieve a desired color target by utilizing various techniques alone or in combination. A first approach generally involves changing a coloration efficiency of a WO.sub.x electrochromic (EC) layer by lowering a sputter temperature to achieve a WO.sub.x microstructural change in the EC layer. A second approach generally involves utilizing a dopant (e.g., Mo, Nb, or V) to improve the neutrality of the tinted state of WO.sub.x (coloration efficiency changes). A third approach generally involves tailoring a thickness of the WO.sub.x layer to tune the color of the tinted stack.

The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

A plasma processing apparatus includes an impedance matching circuit, a balun having a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an adjustment reactance configured to affect a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode, a high-frequency power supply configured to supply a high frequency between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and a controller configured to control an impedance of the impedance matching circuit and a reactance of the adjustment reactance.

The present invention relates to an antimicrobial plastic film and a winding coating method, the antimicrobial plastic film includes a plastic film main part, wherein a surface of said plastic film main part is coated with an antimicrobial coating, the antimicrobial coating includes a bonding layer, a carrier layer, a first antimicrobial layer and a second antimicrobial layer, the winding coating method includes the steps of vacuum treatment , applying a bonding layer, applying a carrier layer, applying a first antimicrobial layer, and applying a second antimicrobial layer

A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

The present disclosure belongs to the technical field of functional films, and in particular relates to a self-lubricating film over wide temperature ranges in vacuum and a preparation method and use thereof. The present disclosure provides a self-lubricating film over wide temperature ranges in vacuum, including: a bonding layer, a transition layer and a lubricating layer laminated in sequence, wherein the bonding layer has a chemical composition of Ti; the transition layer has a chemical composition of Ti and TiB.sub.2; the lubricating layer has a chemical composition of Ti, TiB.sub.2 and MoS.sub.2. In the present disclosure, when the self-lubricating films over wide temperature ranges in vacuum are exposed to different temperatures, different components of Ti, TiB.sub.2 and MoS.sub.2 in the films may be correspondingly excited to enrich in frictional contact areas. The composition of each layer synergistically exerts a lubricating effect and improves the tribological properties and stability of the self-lubricating film over wide temperature ranges in vacuum in a vacuum over a wide temperature range.

Apparatus for depositing germanium and carbon onto one or more substrates comprises a vacuum chamber, at least first and second magnetron sputtering devices and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The first magnetron sputtering device is configured to sputter germanium towards the at least one mount from a first sputtering target comprising germanium, thereby defining a germanium sputtering zone within the vacuum chamber. The second magnetron sputtering device is configured to sputter carbon towards the at least one mount from a second sputtering target comprising carbon, thereby defining a carbon sputtering zone within the vacuum chamber. The at least one mount and the at least first and second magnetron sputtering devices are arranged such that, when each substrate is moved through the germanium sputtering zone on the at least one movable mount, germanium is deposited on the said substrate, and when each substrate is moved through the carbon sputtering zone on the at least one movable mount, carbon is deposited on the said substrate.

The present invention discloses a coated cutting tool having a hard coating film on a surface of the tool. The hard coating film is a nitride, the content ratio of titanium (Ti) with respect to a total amount of metal elements (including semimetal elements) is in a range of 70 at % to 95 at %, the content ratio of silicon (Si) with respect to the total amount of metal elements (including semimetal elements) is in a range of 5 at % to 30 at %, and the content ratio of argon (Ar) with respect to the total amount of metal elements (including semimetal elements) and non-metal elements is 0.1 at % or less. The hard coating film has a NaCl type crystal structure and has an average crystal grain size in a range of 5 nm to 30 nm.