A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film is disclosed. First, a porous amorphous carbon film is prepared by an anode layer ion source assisted plasma chemical vapor deposition method and a reactive magnetron sputtering method on a substrate. The porous amorphous carbon film is then impregnated in an ammonium thiomolybdate solution, so that the ammonium thiomolybdate is adsorbed on the porous amorphous carbon film, and the impregnated porous amorphous carbon film is air dried. During the friction process, the composited porous amorphous carbon superlubricity film prepared in the present disclosure promotes the in-situ decomposition of ammonium thiomolybdate to generate molybdenum disulfide by utilizing the friction heat at the initial stage of running-in, further to generate a graphene-like structure under the function of a catalyst, thus realizing a macroscopic super lubricity through a heterogeneous incommensurate contact between graphene and molybdenum disulfide.

A process for coating a substrate with tantalum nitride by the high-power impulse magnetron sputtering technique, wherein a tantalum target is used and wherein the coating of the substrate is carried out in an atmosphere containing nitrogen, the bias of the target being controlled during the coating by imposing on it the superposition of a continuous bias at a potential between −300 V and −100 V and of a pulsed bias whose pulses have a potential between −1200 V and −400 V.

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

An electrically and magnetically enhanced ionized physical vapor deposition (I-PVD) magnetron apparatus and method is provided for sputtering material from a cathode target on a substrate, and in particular, for sputtering ceramic and diamond-like coatings. The electrically and magnetically enhanced magnetron sputtering source has unbalanced magnetic fields that couple the cathode target and additional electrode together. The additional electrode is electrically isolated from ground and connected to a power supply that can generate positive, negative, or bipolar high frequency voltages, and is preferably a radio frequency (RF) power supply. RF discharge near the additional electrode increases plasma density and a degree of ionization of sputtered material atoms.

A pulsed-DC power generator is used to sputter a substrate in a chamber, and the power generator includes a first voltage source, a second voltage source, a switch unit, a control unit, and a detection unit. The control unit provides a first control signal to control the switching of the switch unit to integrate a first voltage of the first voltage source and a second voltage of the second voltage source into a pulse voltage. The control unit adjusts parameters of a first predetermined time period for arc extinction when the pulse voltage is in a working time period of the first voltage, and the number that a voltage value of the first voltage in a voltage variation to be higher than a range is higher than the number of occurrence.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate, during a pulse off time, determining if a reverse current is equal to or greater than at least one of a first threshold or a second threshold different from the first threshold, and if the reverse current is equal to or greater than the at least one of the first threshold or second threshold, generate a pulsed DC power shutdown response, and if the reverse current is not equal to or greater than the at least one of the first threshold or second threshold, continue supplying pulsed DC power to the target.

Various embodiments herein relate to electrochromic devices, methods of fabricating electrochromic devices, and apparatus for fabricating electrochromic devices. In a number of cases, the electrochromic device may be fabricated to include a particular counter electrode material. The counter electrode material may include a base anodically coloring material. The counter electrode material may further include one or more halogens. The counter electrode material may also include one or more additives.

Connection includes transistor, transistor exciter controlled by the frequency generator and/or programmable unit, the power source of voltage, the unit with capacitors. The voltage power source is connected to the transistor through the unit with capacitors. The stabilizing non-inductive resistor is connected to the power supply branch for the magnetron with transistor. The power stabilizing non-inductive resistor is a resistor with the wire wound by Ayrton-Perry-type winding and/or the resistor with low value of the parasitic inductance on the basis of thin layers. The electronic control circuits of the gate of the transistor include a frequency generator with the cut-off switch and with support elements and also include an exciter with support elements. The connection with the stabilizing non-inductive resistor is used in case of the bipolar and/or multi-circuit pulse plasma generator. The depolarization voltage is led from the outside source through the capacitor to the depolarization block.

A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.

A coated cutting tool includes a substrate of cemented carbide, cubic boron nitride (cBN) or cermet containing tungsten carbide hard grains and a tungsten carbide (WC) layer deposited immediately on top of the substrate surface. The tungsten carbide (WC) layer is a mixture or combination of hexagonal tungsten mono-carbide α-WC phase and cubic tungsten mono-carbide β-WC phase and unavoidable impurities.