A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

A method of growing carbon nanotubes includes following steps. A reactor is constructed, wherein the reactor includes a reactor chamber and a rotating mechanism inside the reactor chamber. A carbon nanotube catalyst composite layer is applied, the carbon nanotube catalyst composite layer is configured to be rotated by the rotating mechanism in the reactor chamber, and the carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. The carbon nanotube catalyst composited layer is positioned inside the reactor chamber. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber. The carbon nanotube catalyst composite layer is rotated. The carbon nanotube catalyst composite layer is heated to grow carbon nanotubes.

A method of scanning a wafer includes placing the wafer over a substrate holder inside a processing chamber, where the wafer is placed at a first twist angle relative to a reference axis of a rotatable feedthrough of the processing chamber. The method further includes performing a first pass scan by exposing the wafer to an ion beam while driving two rotary drives disposed in a scanning chamber synchronously to generate a planar motion of the wafer from a rotational motion of the two rotary drives, where the wafer is oriented continuously at the first twist angle when performing the first pass scan.

A method of scanning a wafer includes placing the wafer over a substrate holder inside a processing chamber, where the wafer is placed at a first twist angle relative to a reference axis of a rotatable feedthrough of the processing chamber. The method further includes performing a first pass scan by exposing the wafer to an ion beam while driving two rotary drives disposed in a scanning chamber synchronously to generate a planar motion of the wafer from a rotational motion of the two rotary drives, where the wafer is oriented continuously at the first twist angle when performing the first pass scan.

Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×10.sup.12/cm.sup.2 or less by adjusting the exposure area of the discharged metal body.

Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×10.sup.12/cm.sup.2 or less by adjusting the exposure area of the discharged metal body.

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 .Math.m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y.sub.2O.sub.3, over 0 mol% to 60 mol% of ZrO.sub.2, and 0 mol% to 9 mol% of Al.sub.2O.sub.3.

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 .Math.m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y.sub.2O.sub.3, over 0 mol% to 60 mol% of ZrO.sub.2, and 0 mol% to 9 mol% of Al.sub.2O.sub.3.