A method for producing a LaCoO.sub.3 film on a substrate that includes positioning the substrate in a vacuum chamber, positioning a cobalt target in the vacuum chamber, positioning a lanthanum target in the vacuum chamber, providing oxygen in the vacuum chamber, and sputtering cobalt atoms off of the cobalt target and lanthanum atoms off of the lanthanum target so that the cobalt and lanthanum atoms interact with the oxygen to form the LaCoO.sub.3 film on the substrate. A power limiter that employs one or more LaCoO.sub.3 films is also disclosed.

A roller for transporting a flexible substrate is described. The roller includes a first coolant supply for cooling a first part of the roller and a second coolant supply for cooling a second part and a third part of the roller. The first part is provided between the second part and the third part. Additionally, a vacuum processing apparatus including a roller and a method of cooling a roller are described.

A scanning system includes a scanning chamber; a first rotary drive disposed in the scanning chamber and configured to rotate around a first axis; a second rotary drive disposed in the scanning chamber and configured to rotate around the first axis synchronously with the first rotary drive; and a bar-and-hinge system disposed in the scanning chamber and mechanically coupled to a substrate holder, the hinge system configured to translate a rotary motion of the first rotary drive and the second rotary drive to a planar motion of the substrate holder.

The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100/Is≤12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

A module for operating a carrier of one or more substrates to be treated in a vacuum deposition method includes a frame provided with a plate receiving, on a first side, an electronic assembly comprising radio transmitter/receiver electronics, a processor card, motor controller electronics and a battery for supplying power to the module. The processor card has a program memory with a program for controlling the motor controller electronics according to data received from a remote apparatus provided with a radio transmitting/receiving device for communicating with the module's radio transmitter/receiver electronics and, on a second side, a device for operating the carrier, which device is provided with a first motor for rotating the carrier about a first axis parallel to the plate and with a second motor for rotating the carrier about a second axis perpendicular to the plate.

A method includes detecting a location of a particle on a bottom surface of an electrostatic chuck; moving a platform to a position under the bottom surface of the electrostatic chuck and right under the particle; and rotating the platform about a center of the platform to remove the particle from the bottom surface of the electrostatic chuck.