A method of growing carbon nanotubes includes following steps. A reactor is constructed, wherein the reactor includes a reactor chamber and a rotating mechanism inside the reactor chamber. A carbon nanotube catalyst composite layer is applied, the carbon nanotube catalyst composite layer is configured to be rotated by the rotating mechanism in the reactor chamber, and the carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. The carbon nanotube catalyst composited layer is positioned inside the reactor chamber. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber. The carbon nanotube catalyst composite layer is rotated. The carbon nanotube catalyst composite layer is heated to grow carbon nanotubes.

A deposition system comprises a vacuum chamber having a cylindrical inner wall, a cylindrical parts carousel disposed concentrically inside the cylindrical inner wall of the vacuum chamber, and one or more deposition sources arranged to flow deposition material onto the cylindrical parts carousel. A cylindrical shutter assembly is disposed concentrically inside the cylindrical inner wall of the vacuum chamber, and has (1) a shuttered position in which the cylindrical shutter assembly blocks the one or more deposition sources from depositing onto the parts carousel and (2) an unshuttered position in which the cylindrical shutter assembly does not block the one or more deposition sources from depositing onto the parts carousel. A drive train rotates the cylindrical shutter assembly between the shuttered and unshuttered positions. The drive train not operatively connected to rotate the cylindrical parts carousel. The deposition sources may include inner and outer sputter sources.

A method of scanning a wafer includes placing the wafer over a substrate holder inside a processing chamber, where the wafer is placed at a first twist angle relative to a reference axis of a rotatable feedthrough of the processing chamber. The method further includes performing a first pass scan by exposing the wafer to an ion beam while driving two rotary drives disposed in a scanning chamber synchronously to generate a planar motion of the wafer from a rotational motion of the two rotary drives, where the wafer is oriented continuously at the first twist angle when performing the first pass scan.

A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The plurality of platens may also be capable of rotation. The central hub also controls the rotation of each of the platens about an axis orthogonal to the rotation axis of the central hub. In this way, variable angle implants may be performed. Additionally, this allows the workpieces to be mounted while in a horizontal orientation.

A substrate processing apparatus includes: a tray provided in a vacuum processing container and having a recess that accommodates a target made of a low-melting-point material; a refrigerator that cools the tray; a substrate holder that holds a substrate; a reversal driver that reverses the position of the substrate holder upside down; and a rotation driver that rotates the substrate holder in a circumferential direction of the substrate.

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.

A sputtering apparatus includes: a processing container; a first target provided inside the processing container and formed of a first material; a second target provided inside the processing container and formed of a second material different from the first material; a stage provided inside the processing container to place a substrate thereon; a shielding plate arranged between the first target and the second target; and a controller, wherein the controller is configured to perform a process of reducing a film stress of a film formed on the shielding plate.

A method of fabricating a thin film with a varying thickness includes the steps of providing a shadow mask with an opening, providing a carrier plate, arranging a substrate on the carrier plate, and coating the substrate through the opening whilst rotating the carrier plate relative to the shadow mask. A plurality of zones of the substrates is swept and exposed from arcuate portions of the opening per each turn by a plurality of predetermined exposure times, respectively. The varying thickness of the thin film corresponds to variation of the predetermined exposure times.

The present invention relates to a manufacturing apparatus and a manufacturing method for microwave means. The manufacturing apparatus (1) for microwave means comprises: a fixture (10, 10′), the fixture (10, 10′) comprising a base (11) capable of rotating about a first axis (A1), and a carrier (12) capable of swinging about a second axis (A2), the carrier (12) being connected to the base (11) so as to hold an insulating substrate (40), wherein the first axis (A1) intersects the second axis (A2); a source (20) for releasing metal ions towards the insulating substrate (40); and a controller (30), the controller (30) coupled to the fixture (10, 10′) and the source (20) and configured to control a movement pattern of the fixture (10, 10′) and/or an angle of the source (20) such that the insulating substrate (40) receives the metal ions from a plurality of angles and a metal layer (50) is formed over all surfaces (41) of the insulating substrate (40).

There is provided a mounting table system which includes: a mounting table rotatably installed so as to mount a substrate thereon; a plurality of heating parts installed in the mounting table, and configured to heat the mounting table; a single power source configured to supply an electric power to the plurality of heating parts; and a power switching part configured to switch from a first heating part among the plurality of heating parts to which the electric power is supplied from the single power source, to a second heating part among the plurality of heating parts, depending on a rotational angle of the mounting table.