In a manufacturing method of a glass roll, a transport device transports a glass film coupled to lead films via coupling portions. The transport device separates the lead films and/or the coupling portions from a heating roller when the lead films and/or the coupling portions pass by the heating roller.

A method for manufacturing a glass article includes a heating step that heats a heating object made of glass. The heating step includes heating the heating object by converting, by a converter arranged between the heating object and a radiant heat source that radiates infrared light, a spectrum of the infrared light radiated from the radiant heat source and causing the heating object to absorb the infrared light radiated from the converter. The converter includes: an infrared light absorber that generates heat by absorbing the infrared light radiated from the radiant heat source; and an infrared light radiator made of a silicon-containing material. The infrared light radiator is heated through thermal conduction from the infrared light absorber. At least part of a surface of the converter facing the heating object includes at least part of a surface of the infrared light radiator.

A substrate supporting unit is provided. The substrate supporting unit possesses a shaft, a first heater, and a stage. The first heater is located in the shaft and is configured to heat an upper portion of the shaft. The stage is located over the shaft and includes a first plate, a second plate over the first plate, and a second heater between the first plate and the second plate.

For vacuum treatment, a substrate is transported to the inner space of a hollow, cylindric body and is deposited on a holding plate and lifted towards and on a substrate support. The opening of the substrate support is aligned with an opening in the wall of the hollow cylindric body. Substrate plate, substrate support and opening are brought in aligned position with a treatment station, by rotating the hollow cylindric body around its axis, in which position the substrate is vacuum treated.

A temperature-controlled shield for an evaporation source is described. The temperature-controlled shield is configured to provide a pre-heating zone or a post-cooling zone.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink is measured. The parameter is compared to a baseline range.

The invention relates to a source arrangement for a deposition apparatus with a direct surface heater for applying a heating power onto a source surface of a source element, comprising a holding structure with a support and at least one source element arranged at the support, the source element comprising a source surface and a second surface opposite to the source surface, wherein the source material can be vaporized and/or sublimated from a source area on the source surface when heated by the surface heater of the deposition apparatus. Further, the invention is related to a deposition apparatus comprising such a source arrangement and to a method for depositing source material on a target material in the deposition apparatus, whereby the deposition apparatus comprises a surface heater and such a source arrangement.

A method and system for vacuum vapor deposition of a deposition material to form functional materials, including a coating, a thin film material, or a thick film material, upon a substrate in space utilizes: a substrate support structure associated with a space platform; a depositor for the deposition material; and a moveable elongate arm associated with a space platform that provides relative movement between the substrate and the depositor.

The present disclosure is a light-emitting diode (LED) with oxidized aluminum nitride (oxidized-AlN) film, which includes a substrate, an aluminum nitride buffer (AlN-buffer) layer, an oxidized-AlN film and a light-emitting diode epitaxial structure. The AlN-buffer layer is disposed on a patterned surface of the substrate, wherein the patterned surface is formed with a plurality of protrusions and a bottom portion. The oxidized-AlN film is disposed on the AlN-buffer layer on the protrusions, and with none disposed on the AlN-buffer layer on the bottom portion. The LED epitaxial structure includes gallium nitride compound crystal formed on the oxidized-AlN film and the AlN-buffer layer, to effectively reduce defect density of the gallium nitride compound crystal and to improve a luminous intensity of the LED.