A sliding member (10) including a coating film (1) composed of a hard carbon layer on a sliding surface (16) of a base material (11). The coating film has, when a cross section thereof is observed by a bright-field TEM image, a thickness within a range of 1 μm to 50 μm, and is configured by repeating units including black hard carbon layers (B), relatively shown in black, and white hard carbon layers (W), relatively shown in white, and laminated in a thickness direction, and comprise an inclined region, provided on a base material side, where thicknesses of white hard carbon layers (W) of the repeating units gradually increase in a thickness direction, and a homogeneous region\, provided on a surface side of the sliding member, where thicknesses of the white hard carbon layers (W) of the repeating units are the same or substantially the same in the thickness direction.

A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a chiller having a cold head maintained at an extremely low temperature and a cold heat transfer body fixed in contact with the cold head and disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body. The stage device further includes a heat insulating structure unit having a vacuum insulated structure and configured to surround at least the cold head and a connection portion between the cold head and the cold heat transfer body, cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage, and a stage support rotated by a driving mechanism and configured to rotatably support the stage.

Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

The disclosure relates to an apparatus for forming patterns on a surface of a substrate plate by a sputtering process, and the apparatus comprises a first vacuum chamber, a sputtering source inside the first vacuum chamber, and an arrangement to place a mask between the sputtering source and the surface of the substrate plate. The disclosure also relates to a method for forming patterns on a surface of a substrate plate by a sputtering process.

A Zn—Mg alloy plated steel material having excellent adhesion to plating and corrosion resistance comprises base steel and a plating layer formed on the surface of the base steel, wherein the plating layer comprises a Zn single phase, a Mg single phase, an MgZn.sub.2 alloy phase, and an Mg.sub.2Zn.sub.11 alloy phase, the Zn single phase is contained in the plating layer at a proportion of 15 to 19 volume %, and the proportion of the Zn single phase in a lower t/2 area of the plating layer adjacent to the base steel may be greater than the proportion of the Zn single phase in an upper t/2 area of the plating layer on the surface layer side of the plating layer. (Here, t means the thickness (μm) of the plating layer).

A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.

A magnet unit for a magnetron sputtering apparatus is disposed above the target has: a yoke made of magnetic material and is disposed to lie opposite to the target; and plural pieces of magnets disposed on a lower surface of the yoke, wherein a leakage magnetic field in which a line passing through a position where the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a lower space of the target as is positioned between the center of the target and a periphery thereof, the magnet unit being driven for rotation about the center of the target. In a predetermined position of the yoke there is formed a recessed groove in a circumferentially elongated manner along an imaginary circle with the center of the target serving as a center.

A system and method are provided for depositing a substance onto a substrate, the system comprising: a chamber adapted to operate under high vacuum; an apparatus for receiving and cleaning the substrate to produce a clean substrate and for delivering the clean substrate to a coating position in the chamber under high vacuum; a carrier assembly for receiving the clean substrate from the apparatus and for retaining the substrate at the coating position; an evaporator adapted to hold a supply of the substance in the chamber and to evaporate and produce a discharge of the substance; and a collimator disposed within the chamber between the supply of the substance and the carrier assembly, the collimator being configured to define an aperture proximal to the substrate and to capture the discharge but for that which is directed through the aperture.