The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

An apparatus comprises a chamber configured to receive a medium. The chamber comprises a first cooled structure having a first surface and a second cooled structure having a first surface. The first surface of the first cooled structure faces the first surface of the second cooled structure and is positioned a predetermined distance therefrom to form a gap, and the gap is configured to receive the medium. The chamber further includes a first gas inlet positioned proximate the center of the first cooled structure, a first slidable structure configured to seal a first side of the chamber when in a closed position, and a second slidable structure, positioned opposite the first slidable structure, and configured to seal a second side of the chamber when in a closed position.

A substrate support plate includes a base plate; at least one spacer arranged on the base plate such that the at least one spacer is restrained from moving relative to the base plate without resort to an adhesive; and a top plate having an upper surface capable of holding a substrate thereon, the top plate being fixed to the base plate with the at least one spacer therebetween.

The color of an electrochromic stack in a tinted state may be modified to achieve a desired color target by utilizing various techniques alone or in combination. A first approach generally involves changing a coloration efficiency of a WO.sub.x electrochromic (EC) layer by lowering a sputter temperature to achieve a WO.sub.x microstructural change in the EC layer. A second approach generally involves utilizing a dopant (e.g., Mo, Nb, or V) to improve the neutrality of the tinted state of WO.sub.x (coloration efficiency changes). A third approach generally involves tailoring a thickness of the WO.sub.x layer to tune the color of the tinted stack.

Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

Embodiments of a lid heater for a deposition chamber are provided herein. In some embodiments, a lid heater for a deposition chamber includes a ceramic heater body having a first side opposite a second side, wherein the ceramic heater body includes a first plurality of gas channels extending from one or more first gas inlets on the first side, wherein each of the one or more first gas inlets extend to a plurality of first gas outlets on the second side; a heating element embedded in the ceramic heater body; and an RF electrode embedded in the ceramic heater body proximate the second side, wherein the first plurality of gas channels extend through the RF electrode.

An optical mount includes a support substrate defining an aperture configured to receive an optical element. A support assembly is positioned proximate a perimeter of the aperture. The support assembly includes a resilient member configured reflects in response to relative motion between the optical element and the support substrate. A support plate is positioned on the resilient member and is in contact with the optical element.

A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.

This invention relates to a coating comprising at least one AlTiN-based film deposited by means of a PVD process, wherein the at least one AlTiN-based film deposited is comprising an Al-content—in relation to the Ti-content—in atomic percentage higher than 75%, and wherein the AlTiN-based film exhibits solely a crystallographic cubic phase and internal compressive stresses and this invention relates to a method involving deposition of an AlTiN-based film.

This disclosure provides an array substrate and a fabricating method thereof. After metal traces are recrystallized from the molten state, sizes of metal grains constituting the metal traces become larger, and the grain boundaries and defects of the film layer of the metal traces are reduced, thereby reducing the degree of scattering of electrons during the transmission in the metal traces, reducing the resistivity of the metal traces, improving the conductivity of the metal traces and the array substrate, and reducing the thickness of the metal layer forming the metal traces.