A sputtering target includes: a base configured to transfer heat in a basal plane direction; and a first heat sink disposed on a sidewall of the base, the first heat sink configured to transfer heat along a direction that is different from the basal plane direction.

The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.

The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

Methods and systems for growing thin films via molecular-beam epitaxy (MBE) on substrates are provided. The methods and systems utilize a thermally conductive backing plate including an infrared-absorbing coating (IAC) formed, for example, on one side of the thermally conductive backing plate to provide an asymmetric emissivity that absorbs infrared radiation (IR) on the side having the IRC and does not on the non-coated side of the thermally conductive backing plate (e.g., refractive metal or alloy). The asymmetric emissivity shields the thin film being deposited on a substrate from the IR during formation.

A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400 C., and thermally annealing the substrate at a temperature above 500 C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

A cryogenic heat transfer system including a platen supported by a rotatable shaft, a housing surrounding a portion of the rotatable shaft, the housing including an annular heat sink surrounding the rotatable shaft and defining a heat transfer gap between the heat sink and the rotatable shaft, the heat sink including a fluid conduit extending therethrough for circulating a first cooling fluid through the heat sink, a first dynamic seal arrangement extending from a first axial end of the heat sink and surrounding the rotatable shaft, and a second dynamic seal arrangement extending from a second axial end of the heat sink opposite the first axial end and radially surrounding the rotatable shaft, wherein the heat sink and the first and second dynamic seal arrangements define a fluidically sealed volume surrounding the rotatable shaft, the fluidically sealed volume containing a second cooling fluid.

The present disclosure relates to a flat steel product comprising a steel substrate with, present at least on one side of the steel substrate, anticorrosion coating composed of zinc and unavoidable impurities. This anticorrosion coating has continuous microchannels which connect the steel substrate to an ambient atmosphere. Additionally, the present disclosure relates to a process for producing a flat steel product of this kind.

A film formation apparatus includes: a chamber which an interior thereof can be made vacuum; a rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory; a film formation unit including a target formed of film formation material and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the film formation unit depositing by sputtering film formation material on the workpiece; a film processing unit processing the film deposited by the film formation unit on the workpiece; holding regions each holding the workpiece and provided in a circular film formation region facing the film formation unit and the film processing unit that is a region other than the rotation axis in the rotary table; and a heater provided in the holding regions.

A substrate processing system that is optimized for the production of smaller volumes of semiconductor components is disclosed. To minimize cost, the substrate processing system is designed to accommodate smaller substrates, such as substrates having a diameter of roughly one inch. Additionally, the components of the substrate processing system are designed to be interchangeable, thereby further reducing cost and complexity. In certain embodiments, the substrate processing system comprises a lower assembly, which may be used with one or more upper assemblies. The lower assembly is used to support the substrate and provide many of the fluid, electrical, and sensor connections, while the upper assemblies include the apparatus required to perform a certain fabrication function. For example, different upper assemblies may exist for deposition, etching, sputtering and ion implantation.

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.