A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition in an edge region of a substrate. The apparatus includes a reflector assembly that surrounds a substrate support and is configured to reflect heat to the substrate during reflowing of material deposited on the substrate and a plurality of permanent magnets embedded in the reflector assembly that are configured to influence ion trajectories on the edge region of the substrate during deposition processes, the plurality of permanent magnets are spaced symmetrically around the reflector assembly.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.

Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

A substrate fixing device according to the present invention is a substrate fixing device configured to fix a substrate so that a deposition material evaporated from at least one evaporation source is deposited on the substrate. The substrate fixing device includes a substrate temperature adjustment part configured to transfer heat to the substrate, and a substrate fixing part coupled to one side of the substrate temperature adjustment part and configured to fix the substrate, in which the substrate fixing part fixes the substrate so that a front surface of the substrate is exposed in a direction toward the evaporation source, and in which a space is formed between the substrate fixing part and a rear surface of the substrate.

An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

Exemplary semiconductor processing systems may include a chamber body having sidewalls and a base. The semiconductor processing systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate. The substrates support may include a shaft coupled with the support plate. The semiconductor processing systems may include a liner positioned within the chamber body and positioned radially outward of a peripheral edge of the support plate. An inner surface of the liner may include an emissivity texture.

The present disclosure provides a sputtering reaction chamber and a process assembly of the sputtering reaction chamber. The process assembly includes a shield, and the shield includes an integrally formed body member and a cover ring member, wherein the body member may be in a ring shape. The cover ring member may extend from a bottom of the body member to an inner side of the body member and may be configured to press an edge of a to-be-processed workpiece when a process is performed. A cooling channel may be arranged in the cover ring member and the body member and may be configured to cool the cover ring member and the body member by transferring coolant. The process assembly of the sputtering reaction chamber and the sputtering reaction chamber provided by the present disclosure can reduce heat radiation of the process assembly to the to-be-processed workpiece and released gases and impurities to effectively reduce a whisker defect and improve a product yield.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

A method for modifying carbon fibers and a product thereof are provided. Modified carbon fibers are obtained by heating prepared carbon fibers under an inert atmosphere after magnetron sputtering treatment. The magnetron sputtering treatment takes the prepared carbon fibers as a substrate material and carbon as a target material, and sputtering conditions includes: a vacuum degree of 2×10.sup.−3 Pa, a distance from the target material to the substrate material of 4 cm, a magnetron sputtering power of 150-350 W, a magnetron sputtering pressure of 0.5-1.6 Pa, a magnetron sputtering duration of 20-60 min, a high purity argon as working gas, and an argon flow rate of 80 mL/min The heating treatment is carried out under conditions including: a heating rate of 5° C./min, a heating temperature of 200-600° C., and a heating duration of 25-40 min.