A method for producing a LaCoO.sub.3 film on a substrate that includes positioning the substrate in a vacuum chamber, positioning a cobalt target in the vacuum chamber, positioning a lanthanum target in the vacuum chamber, providing oxygen in the vacuum chamber, and sputtering cobalt atoms off of the cobalt target and lanthanum atoms off of the lanthanum target so that the cobalt and lanthanum atoms interact with the oxygen to form the LaCoO.sub.3 film on the substrate. A power limiter that employs one or more LaCoO.sub.3 films is also disclosed.

A chip carrier device includes a frame, a chip support and a limiter. The chip support is disposed on the frame, and includes a supporting film for chips to be adhered thereto. A peripheral portion of the supporting film is attached to a surrounding frame part of the frame. A crossing portion of the supporting film passes through a center of the supporting film, and interconnects two opposite points of the peripheral portion. The supporting film is formed with through holes. The limiter includes a limiting part that interconnects two opposite points of the surrounding frame part, that is positioned corresponding to the crossing portion, and that is positioned on one side of the supporting film where the chips are to be arranged.

A roller for transporting a flexible substrate is described. The roller includes a first coolant supply for cooling a first part of the roller and a second coolant supply for cooling a second part and a third part of the roller. The first part is provided between the second part and the third part. Additionally, a vacuum processing apparatus including a roller and a method of cooling a roller are described.

The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

A roller for transporting a flexible substrate is described. The roller includes a main body having a plurality of gas supply slits provided in an outer surface of the main body. The plurality of gas supply slits extends in a direction of a central rotation axis of the roller. Further, the roller includes a sleeve provided circumferentially around and in contact with the main body. The sleeve has a plurality of gas outlets extending in a radial direction (R) and being provided above the plurality of gas supply slits.

A roller for transporting a flexible substrate is described. The roller includes a main body having a plurality of gas supply slits provided in an outer surface of the main body. The plurality of gas supply slits extends in a direction of a central rotation axis of the roller. Further, the roller includes a sleeve provided circumferentially around and in contact with the main body. The sleeve has a plurality of gas outlets being provided above the plurality of gas supply slits. Further, the sleeve includes a metal layer embedded within isolating material.

Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

In a method for coating a base body, a first target and a second target are arranged in a vacuum chamber. A base body to be coated is arranged in the vacuum chamber is heated to a coating temperature of less than 600° C. During sputtering with sputter gas ions, first target particles are liberated from the first target and second target particles are liberated from the second target and are deposited as coating particles on the base body. A first sputter rate is specified for the first target and a second sputter rate is specified for the second target such that, during the sputtering process, the coating is generated as an A15 phase with an intended stoichiometric ratio of the first target particles to the second target particles. A functional element has a base body and a coating of Nb.sub.3Sn applied directly on the surface of the base body.

A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.