A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a cold heat transfer body fixedly disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body and cooled to an extremely low temperature by a chiller disposed below the cold heat transfer body, and cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage. The stage device further includes a stage support configured to rotatably support the stage and formed in a cylindrical shape to surround an upper part of the cold heat transfer body wherein the stage support has a vacuum insulation structure, and a rotation part configured to support the stage support and rotated by a driving mechanism while being sealed with magnetic fluid.

A stage device includes a stage configured to hold a target substrate in a vacuum chamber, a chiller having a cold head maintained at an extremely low temperature and a cold heat transfer body fixed in contact with the cold head and disposed below a bottom surface of the stage with a gap between the stage and the cold heat transfer body. The stage device further includes a heat insulating structure unit having a vacuum insulated structure and configured to surround at least the cold head and a connection portion between the cold head and the cold heat transfer body, cooling fluid supplied to the gap to transfer cold heat of the cold heat transfer body to the stage, and a stage support rotated by a driving mechanism and configured to rotatably support the stage.

Methods and apparatus for producing fine pitch patterning on a substrate. Warpage correction of the substrate is accomplished on a carrier or carrier-less substrate. A first warpage correction process is performed on the substrate by raising and holding a temperature of the substrate to a first temperature and cooling the carrier-less substrate to a second temperature. Further wafer level packaging processing is then performed such as forming vias in a polymer layer on the substrate. A second warpage correction process is then performed on the substrate by raising and holding a temperature of the substrate to a third temperature and cooling the substrate to a fourth temperature. With the warpage of the substrate reduced, a redistribution layer may be formed on the substrate with a 2/2 m l/s fine pitch patterning.

A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a sputtering chamber, a film formation processing unit including a mount surface and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region to provide a file formation apparatus which employs a simple structure that is capable of suppressing heating of electronic components.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

A vacuum atmosphere exchange device used in a vacuum sputtering apparatus is provided. The vacuum atmosphere exchange device has a substrate transferring track. The vacuum atmosphere exchange device has a cooling device disposed along a transferring path of the substrate transferring track to rapidly cool down a film formation substrate on the substrate transferring track. A vacuum sputtering apparatus is also provided. By using the vacuum sputtering apparatus and the vacuum atmosphere exchange device thereof, the substrate after the deposition process can be rapidly cooled down such that the problem of film quality caused by high temperature and temperature non-uniformity can be resolved.

In an oxidation processing module, a stage on which a substrate having a metal film is mounted is provided and a cooling mechanism is provided to cool the stage to cool the substrate mounted on the stage to a temperature of 25 C. or lower. Further, a head unit has a facing surface disposed to face an upper surface of the stage and an oxidizing gas supply unit configured to supply oxidizing gas for oxidizing the metal film toward a gap between the facing surface and the upper surface of the stage, and a rotation driving unit is configured to rotate the head unit about a rotation axis intersecting with the upper surface of the stage.

Methods for making solid-state laminate electrode assemblies include methods of forming a solid electrolyte interphase (SEI) by ion implanting nitrogen and/or phosphorous into the glass surface by ion implantation.

A heating device includes a holding member having a resistive heating element, a columnar support member joined to the holding member, power receiving electrodes connected to the resistive heating element, and an electrode terminal unit disposed in each of through holes in the columnar support member. Each of the electrode terminal units includes a first columnar member having one end portion connected to the power receiving electrode and the other end portion connected to a metal stranded wire, and a second columnar member having an end portion connected to the metal stranded wire. A columnar member assembly having a portion of the first columnar member and a portion of the second columnar member includes a general portion and a large-diameter portion. The distance between the large-diameter portion and an inner peripheral surface of the through hole is smaller than the distance between the general portion and the inner peripheral surface.