There is provided a film forming apparatus for forming a polymer film on a target substrate by a deposition polymerization, including: a stage provided inside a processing container in which the target substrate is accommodated, the target substrate being placed on the stage; a stage heater provided inside the stage and configured to heat the target substrate placed on the stage; a ceiling plate heater provided in a ceiling plate of the processing container to face the stage; and a controller configured to control a temperature of the target substrate in a first temperature unit by controlling a temperature of the stage heater on the first temperature unit, and to control the temperature of the target substrate on a temperature unit finer than the first temperature unit by a radiant heat radiated through the ceiling plate by controlling a temperature of the ceiling plate heater on a second temperature unit.

In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

The present disclosure provides a carrying device and a semiconductor processing apparatus. The carrying device includes a heating plate and a cooling plate, the heating plate and the cooling plate are spaced apart, and a thermal insulation region is formed between the heating plate and the cooling plate. The carrying device of the present disclosure not only can preempt the need to stop the process due to excessively high temperature, but also can maintain a uniform and stable temperature throughout the process, thereby providing a qualified and stable processing temperature for a workpiece to be processed, and eventually obtaining better processing results.

A substrate placement device includes a stage having a substrate placement surface on which a substrate is placed, a cooling head provided to face the stage and configured to be cooled to an extremely low temperature by a refrigerator, a contact/separation mechanism configured to cause the stage and the cooling head to be brought into contact with or separated from each other, a rotation mechanism configured to rotate the stage, and a controller. The controller is configured to: cause, except during the film formation, the stage and the cooling head to be in a state where the stage and the cooling head are brought into contact with each other to place the substrate on the stage in that state; and cause, during the film formation, the stage to rotate in a state where the stage and the cooling head are separated from each other by the contact/separation mechanism.

A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber. The vacuum treatment chamber is split in a workpiece treatment compartment and in a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows providing a pumping port of a flow cross-section area freely selectable independently from the geometry of the treatment compartment.

Provided is a plated steel sheet often used as materials for vehicles, home appliances, construction and the like and, more specifically, to a plated steel sheet having a multilayer structure and a method for manufacturing the same.

The present invention provides a SiC single crystal manufacturing apparatus, including a crystal growth vessel which has a source loading portion to hold a SiC source, and a lid which is provided with a seed crystal support to hold a seed crystal; an insulating material which has at least one through-hole and covers the crystal growth vessel; a heater which is configured to heat the crystal growth vessel; and a temperature measuring instrument which is configured to measure the temperature of the crystal growth vessel through the through-hole, wherein the inner wall surface of the through-hole of the insulating material is coated with a coating material which contains a heat-resistant metal carbide or a heat-resistant metal nitride.

In a surface-coated cutting tool, a hard coating includes one or more layers. At least one layer thereof is a hard coating layer composed of a complex nitride or carbonitride layer of Al, Cr, and Si and satisfying (Al.sub.1-x-yCr.sub.xSi.sub.y)(C.sub.zN.sub.1-z) where x, y and z are atomic ratios and satisfy 0.1x0.4, 0.01y0.2, and 0z0.3, respectively. The hard coating layer contains particles including: less than 10 atomic % of non-metal components selected from C and N; and metal components selected from Cr, Al and Si. In the cross-section perpendicular to the tool body surface, the number ratio of oblate particles with an Al content of 50 atomic % or less, a long diameter of less than 0.5 m, and an aspect ratio of 2.0 or more is 90% or more with respect to the total number of the particles.

Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate support includes a substrate support pedestal having an upper surface to support a substrate and an opposing bottom surface, wherein the substrate support pedestal is formed of a material that is transparent to radiation; a lamp assembly disposed below the substrate support pedestal and having a plurality of lamps configured to heat the substrate; a pedestal support extending through the lamp assembly to support the substrate support pedestal in a spaced apart relation to the plurality of lamps; a shaft coupled to a second end of the pedestal support opposite the first end; and a rotation assembly coupled to the shaft opposite the pedestal support to rotate the shaft, the pedestal support, and the substrate support pedestal with respect to the lamp assembly.