A cooling plate for a cooling system includes a plurality of cooling zones providing with a water loop. A water temperature controller for regulating a temperature of water stored in the water storage tank for delivering water to a water inlet and recovering water from a water outlet. The plurality of cooling temperature of the water flowing in the water loop in the zone is different. By the above mentioned structure, the plurality of water loops are supplied with water from a water storage tank, the temperature controller adjusts the temperature of the water in the water storage tank such that the temperature of the water is different, so that the temperature of each part of the glass substrate is adjusted by the water loop of multiple cooling zones on the cooling plate to ensure uniform heating of the glass substrate.

Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.

A system and method are provided for depositing a substance onto a substrate, the system comprising: a chamber adapted to operate under high vacuum; an apparatus for receiving and cleaning the substrate to produce a clean substrate and for delivering the clean substrate to a coating position in the chamber under high vacuum; a carrier assembly for receiving the clean substrate from the apparatus and for retaining the substrate at the coating position; an evaporator adapted to hold a supply of the substance in the chamber and to evaporate and produce a discharge of the substance; and a collimator disposed within the chamber between the supply of the substance and the carrier assembly, the collimator being configured to define an aperture proximal to the substrate and to capture the discharge but for that which is directed through the aperture.

A circular PVD chamber has a plurality of sputtering targets mounted on a top wall of the chamber. A pallet in the chamber is coupled to a motor for rotating the pallet about its center axis. The pallet has a diameter less than the diameter of the circular chamber. The pallet is also shiftable in an XY direction to move the center of the pallet beneath any of the targets so all areas of a workpiece supported by the pallet can be positioned directly below any one of the targets. A scanning magnet is in back of each target and is moved, via a programmed controller, to only be above portions of the workpiece so that no sputtered material is wasted. For depositing a material onto small workpieces, a cooling backside gas volume is created between the pallet and the underside of sticky tape supporting the workpieces.

A process for producing a radiation resistant nanocrystalline material having a polycrystalline microstructure from a starting material selected from metals and metal alloys. The process including depositing the starting material by physical vapor deposition onto a substrate that is maintained at a substrate temperature from about room temperature to about 850 C. to produce the nanocrystalline material. The process may also include heating the nanocrystalline material to a temperature of from about 450 C. to about 800 C. at a rate of temperature increase of from about 2 C./minute to about 30 C./minute; and maintaining the nanocrystalline material at the temperature of from about 450 C. to about 800 C. for a period from about 5 minutes to about 35 minutes. The nanocrystalline materials produced by the above process are also described. The nanocrystalline materials produced by the process are resistant to radiation damage.

A deposition device includes: a cooling unit that cools workpieces; a rotating table main body that rotates around a vertical axis, this rotating table main body having a cooling unit placement portion on which the cooling unit is placed and workpiece placement portions which are arranged so as to surround the periphery of the cooling unit placement portion and on which the workpieces are placed respectively; a lifting mechanism that lifts and lowers the cooling unit, inside the space, between a first position in which the cooling unit is placed on the rotating table main body and a second position in which the cooling unit is spaced upward from the rotating table main body and faces side surfaces of the workpieces placed on the workpiece placement portions; and refrigerant piping attached to the chamber and detachably connected to the cooling unit to supply the refrigerant to the cooling unit.

A method for depositing film on a substrate (16) through pulsed laser deposition, which includes: generating at least two pulsed laser beams (4, 5, 6) with at least one laser (1), and directing the at least two laser beams (4, 5, 6) to different target spots (9, 10, 11) of a target (12), whereby the target (12) is ablated and at least two plasma plumes (13) are created. The plasma plumes (13) create a flow of target material towards the substrate (16) and the target material is deposited onto the substrate (16) at a deposition area (24). The plasma plumes (13) created by the at least two laser beams (4, 5, 6) are spatially and temporally superimposed, and the target spots (9, 10, 11) are separated from each other at a distance that allows a gas-dynamical interaction of the created plasma plumes (13).

A method for growing carbon nanotubes is provided. A reactor including a reactor chamber and a substrate located in the reactor chamber is provide. The substrate is a hollow structure including a sidewall and a bottom. The hollow structure also defines an opening. The sidewall includes a carbon nanotube layer and catalyst particles dispersed in the carbon nanotube layer. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber so that the mixture of carbon source gas and carrier gas flows into the hollow structure from the opening and out of the hollow structure through the sidewall. The hollow structure is heated.

An electrostatic chuck unit includes a first wiring portion configured to generate a relatively weak electrostatic force and a second wiring portion configured to generate a relatively strong electrostatic force.

A method of forming a piezoelectric thin film can be provided by heating a substrate in a process chamber to a temperature between about 350 degrees Centigrade and about 850 degrees Centigrade to provide a sputtering temperature of the substrate and sputtering a Group III element from a target in the process chamber onto the substrate at the sputtering temperature to provide the piezoelectric thin film including a nitride of the Group III element on the substrate to have a crystallinity of less than about 1.0 degree at Full Width Half Maximum (FWHM) to about 10 arcseconds at FWHM measured using X-ray diffraction (XRD).