Patent classifications
C23C14/541
Process kit having tall deposition ring for PVD chamber
Embodiments of a process kit are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support, the deposition ring including an annular band configured to rest on a lower ledge of the substrate support, the annular band having an upper surface and a lower surface, the lower surface including a step between a radially inner portion and a radially outer portion; an inner lip extending upwards from the upper surface of the annular band and adjacent an inner surface of the annular band, wherein a depth between an upper surface of the annular band and a horizontal portion of the upper surface of the inner lip is between about 6.0 mm and about 12.0 mm; a channel disposed radially outward of and beneath the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.
Sputtering reaction chamber and process assembly of sputtering reaction chamber
The present disclosure provides a sputtering reaction chamber and a process assembly of the sputtering reaction chamber. The process assembly includes a liner, and the liner includes an integrally formed body member and a cover member. The cover member may extend from a bottom of the body member to an inner side of the body member and may be configured to press an edge of a to-be-processed workpiece when a process is performed. A cooling channel may be arranged in the cover member and the body member and may be configured to cool the cover member and the body member by transferring coolant. The process assembly of the sputtering reaction chamber and the sputtering reaction chamber provided by the present disclosure can reduce heat radiation of the process assembly to the to-be-processed workpiece and released gases and impurities to effectively reduce a whisker defect and improve a product yield.
Iron bus bar having copper layer, and method for manufacturing the same
A method of manufacturing an iron bus bar includes preparing an iron core and forming a copper layer having a thickness of 10 to 30 m on the iron core by coating. The manufactured iron bus bar has high strength and durability as well as excellent electrical conductivity can be manufactured at low cost.
APPARATUS AND METHOD FOR DEVELOPING FINGERPRINTS AT COOL TEMPERATURES
Method for detecting fingerprints comprising: providing a chamber 1 suitable for containing a substrate 2 suspected of containing a fingerprint; bringing the temperature of the chamber to a target temperature below ambient temperature utilizing a refrigeration unit 3 operatively associated with the chamber; placing the substrate suspected of containing a fingerprint in a suitable location 4 within the chamber and maintaining the substrate therein for a time sufficient to allow the substrate to attain the target temperature; bringing the humidity within the chamber to a target humidity utilizing a nebulizer/humidifier 5 operatively associated with the chamber and employing circulation fan 14 to ensure uniform temperature, humidity and vapor content throughout the chamber; providing a cyanoacrylate powder 6 in the chamber and raising the temperature of the cyanoacrylate powder to a temperature which vaporizes the cyanoacrylate powder utilizing a cyanoacrylate accelerator 7 operatively associated with the chamber. This procedure develops any fingerprints present on the substrate. Subsequently, venting system 12 purges the fumes and then the substrate is removed from the chamber and inspected to visualize any cyanoacrylate-coated fingerprints present.
Coating film, manufacturing method for same, and PVD device
Provided are a coating film, a manufacturing method for the same, and a PVD device that not only sufficiently improve the balance of low-friction properties and wear resistance, but also improve chipping resistance and peeling resistance. This film is coated on a substrate surface, wherein the coating film has a hard carbon that presents relatively black and white when observed in a cross-sectional bright-field TEM image, a mesh-shaped hard carbon layer is formed using a PVD method, said layer having white-colored hard carbon in a mesh shape extending in the thickness direction and black-colored hard carbon dispersed into the cavities in the mesh, and the ID/IG ratio is 1-6 when the mesh-shaped hard carbon layer is measured using Raman spectroscopy, said ratio being the ratio of the Raman spectrum D band peak area intensity and G band peak area intensity.
Manufacturing method of magneto-resistive effect device
A manufacturing method of a magneto-resistive effect device, the manufacturing method includes steps of: forming an Mg film on a substrate on which a reference layer is formed and oxidizing the Mg film to form an MgO layer on the reference layer; heating the substrate on which the MgO layer is formed; after the step of heating, forming an Mg layer on the MgO layer; cooling the substrate on which the Mg layer is formed; and forming a free layer on the Mg layer in a state where the substrate is cooled by the cooling step, and the step of forming the Mg layer, the step of cooling, and the step of forming the free layer are performed in the process same process chamber.
Solid-state image sensing device, manufacturing method, and electronic apparatus
The present disclosure relates to a solid-state image sensing device, a manufacturing method, and an electronic apparatus, in which surface roughness on a wiring surface can be suppressed. In redistribution layer forming processing, a Ti/Cu film corresponds to a barrier layer and a seed layer is formed by Ti/Cu sputtering after opening a through-silicon via. At this point, actually, degassing heating, reverse sputtering, Ti deposition, and Seed-Cu deposition are sequentially performed. As a method of depositing a Seed-Cu film having high crystallinity in deposition of the Seed-Cu film, performing deposition by increasing a substrate temperature to a high temperature is one method, and the Seed-Cu film of Cu(111)/(200) is formed by performing deposition at the substrate temperature of 60 degrees or more, and Cu haze are suppressed. The present disclosure can be applied to a CMOS solid-state image sensing device used as an imaging device such as a camera.
FILM-FORMING APPARATUS, METHOD FOR PRODUCING FILM-FORMED PRODUCT USING SAME, AND COOLING PANEL
A film-forming apparatus having a simple and downsized structure is provided. The film-forming apparatus includes at least one target having an opposing face that opposes a substrate, a plurality of target holders each detachably holding the target, a cooling unit that cools a plurality of the target holders, and at least one cooling panel. The at least one cooling panel includes a held part held by the target holder, and a heat receiving part having a heat receiving face that opposes the substrate with the held part held by the target holder and receives radiation heat emitted from the substrate. The held part transfers heat from the heat receiving face to the target holder. Each target holder selectively holds the target or the cooling panel.
ELECTRICALLY AND MAGNETICALLY ENHANCED IONIZED PHYSICAL VAPOR DEPOSITION UNBALANCED SPUTTERING SOURCE
A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas.
PLASMA PROCESSING APPARATUS
Temperature uniformity in a mounting surface of a mounting table is improved. A plasma processing apparatus includes the mounting table having thereon the mounting surface on which a work-piece serving as a plasma processing target is mounted; a coolant path formed within the mounting table along the mounting surface of the mounting table; and an inlet path connected to the coolant path from a backside of the mounting surface of the mounting table and configured to introduce a coolant into the coolant path. The inlet path is extended from the backside of the mounting surface of the mounting table such that an extension direction of the inlet path is inclined at an angle greater than 90 with respect to a flow direction of the coolant flowing through the coolant path, and then, connected to the coolant path.