A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of at least one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, or an electromagnetic coil current of the at least one power supply.

A substrate processing apparatus includes: a stage having a first contact surface; a freezing device having a second contact surface; an elevating device to be capable of thermally connecting or separating the second contact surface and the first contact surface; and a heat conductive member interposed between the first contact surface and the second contact surface, wherein the heat conductive member is made of a soft metal that is softer than at least one of a material of the first contact surface or a material of the second contact surface.

According to various aspects, a method is provided including: depositing a material layer on a substrate, wherein the material layer includes at least a first element and a second element in a predefined atomic ratio, wherein the first element has a higher temperature-dependent re-evaporation rate from the substrate and/or the material layer than the second element; wherein depositing the material layer includes: generating a deposition material stream for deposition on the substrate, wherein the deposition material stream includes an atomic ratio of the first element to the second element higher than the predefined atomic ratio, and setting a temperature of the substrate to evaporate atoms of the first element from the substrate and/or the material layer such that the material layer has the predefined atomic ratio of the first element and the second element.

A stage 1 that is installed in a chamber and that is for heating and cooling an object, the stage includes: a stage body 5 having a mount surface on which the object is to be mounted; a first pipe-shaped part 7 for causing a first fluid for adjusting the temperature of the mount surface to flow therein; and a first pipe-supporting part 9 for supporting the first pipe-shaped part 7. The stage body 5 has a first groove part 11 for housing the first pipe-shaped part 7, and a pair of cutouts 13a and 13b that oppose each other with the first groove part 11 therebetween. The first pipe-supporting part 9 has a linking section 15 that links the pair of cutouts 13a and 13b together.

Embodiments of a lid heater for a deposition chamber are provided herein. In some embodiments, a lid heater for a deposition chamber includes a ceramic heater body having a first side opposite a second side, wherein the ceramic heater body includes a first plurality of gas channels extending from one or more first gas inlets on the first side, wherein each of the one or more first gas inlets extend to a plurality of first gas outlets on the second side; a heating element embedded in the ceramic heater body; and an RF electrode embedded in the ceramic heater body proximate the second side, wherein the first plurality of gas channels extend through the RF electrode.

A temperature-controlled substrate support for a substrate processing system includes a substrate support and a controller. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one, and a temperature sensor located in one of the N zones. The controller is configured to calculate N resistances of the N resistive heaters during operation and adjust power to N-1 of the N resistive heaters during operation of the substrate processing system in response to a temperature measured by the temperature sensor located in the one of the N zones and the N resistances of the N resistive heaters.

A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

Methods, systems, and apparatus for controlling substrate temperature include: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on the substrate; and independently controlling fluid flowing in a plurality of separate fluid channels in the substrate support, each fluid channel corresponding to one zone of the plurality of zones, wherein fluid flow is controlled based on a target life and the temperature in each zone.

Methods and apparatus for controlling substrate temperature, comprising: monitoring a temperature in each zone of a plurality of zones of a substrate support, the substrate support having a support surface for supporting a substrate, wherein the support surface is opposed to a sputtering target for depositing material onto the substrate; depositing material from the sputtering target on a substrate; and independently controlling a plurality of heaters in the substrate support, each heater corresponding to one zone of the plurality of zones, wherein each heater is controlled based on a target life and the temperature in each zone.

Aspects of the disclosure provided herein generally provide a substrate processing system that includes: a processing chamber including: a top plate having an array of process station openings disposed therethrough surrounding a central axis, a bottom plate having a first central opening, and a plurality of side walls between the top plate and the bottom plate; a plurality of heaters disposed in the top plate and the bottom plate and configured in a plurality of regions; and a system controller configured to independently control the plurality of heaters in each region.