Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a support plate and a substrate temperature monitoring system. The support plate has a top surface configured to support a substrate. The substrate temperature monitoring system is disposed in the substrate support plate. The substrate temperature monitoring system is configured to measure a temperature of the substrate from a bottom surface of the substrate. The substrate temperature monitoring system includes a window, a body, and a temperature sensor. The window is integrally formed in a top surface of the support plate. The body is embedded in the support plate, through the bottom surface. The body defines an interior passage. The temperature sensor is disposed in the interior passage beneath the window. The temperature sensor is configured to measure the temperature of the substrate.

A vacuum chamber for vacuum processing is provided. The vacuum chamber includes at least one device comprising at least one treated surface, the at least one treated surface being provided by ultra-short pulse laser surface treatment. The at least one treated surface is positioned and shaped so as to provide thermal energy to and/or absorb thermal energy from a component, the component being positioned in a relative position to the at least one treated surface.

A method of growing carbon nanotubes includes following steps. A reactor is constructed, wherein the reactor includes a reactor chamber and a rotating mechanism inside the reactor chamber. A carbon nanotube catalyst composite layer is applied, the carbon nanotube catalyst composite layer is configured to be rotated by the rotating mechanism in the reactor chamber, and the carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. The carbon nanotube catalyst composited layer is positioned inside the reactor chamber. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber. The carbon nanotube catalyst composite layer is rotated. The carbon nanotube catalyst composite layer is heated to grow carbon nanotubes.

An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

A bismuth ferrite film material, a method for integrally preparing a bismuth ferrite film on a silicon substrate at a low temperature, and an application, includes: magnetron sputtering a bottom electrode, a buffer layer and a bismuth ferrite film on one surface of a Si substrate in sequence from bottom to top at a processing temperature of 300-400° C.; reducing the temperature to room temperature; and a top electrode is deposited via magnetron sputtering on the surface of the bismuth ferrite film; the buffer layer mentioned hereof is a conductive oxide which matches the lattice of bismuth ferrite and is of a perovskite structure (AB03). According to the present invention, the temperature for preparing the bismuth ferrite film material can be reduced to 450° C. or below, and the bismuth ferrite film material has a high spontaneous electric polarization.

A substrate processing apparatus includes: a tray provided in a vacuum processing container and having a recess that accommodates a target made of a low-melting-point material; a refrigerator that cools the tray; a substrate holder that holds a substrate; a reversal driver that reverses the position of the substrate holder upside down; and a rotation driver that rotates the substrate holder in a circumferential direction of the substrate.

Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.

There is provided a mounting table system which includes: a mounting table rotatably installed so as to mount a substrate thereon; a plurality of heating parts installed in the mounting table, and configured to heat the mounting table; a single power source configured to supply an electric power to the plurality of heating parts; and a power switching part configured to switch from a first heating part among the plurality of heating parts to which the electric power is supplied from the single power source, to a second heating part among the plurality of heating parts, depending on a rotational angle of the mounting table.

The purpose of the invention is to provide technology, which, in addition to being capable of forming thick hard carbon films of excellent durability even using PVD, is able to establish both chipping resistance and wear resistance in the formed hard carbon film and able to improve low friction properties and peeling resistance. Provided is a coating film to be coated on the surface of a substrate, the coating film having a total film thickness of greater than 1 μm to 50 μm wherein: when a cross-section is observed using bright field TEM images, white hard carbon layers that are shown as relatively white and black hard carbon layers that are shown as black are alternately laminated in the thickness direction; and the white hard carbon layers have regions that have grown in a fan-shape in the thickness direction.

Provided are a coating film, a manufacturing method for the same, and a PVD device that not only sufficiently improve the balance of low-friction properties and wear resistance, but also improve chipping resistance and peeling resistance. This film is coated on a substrate surface, wherein the coating film has a hard carbon that presents relatively black and white when observed in a cross-sectional bright-field TEM image, a mesh-shaped hard carbon layer is formed using a PVD method, said layer having white-colored hard carbon in a mesh shape extending in the thickness direction and black-colored hard carbon dispersed into the cavities in the mesh, and the ID/IG ratio is 1-6 when the mesh-shaped hard carbon layer is measured using Raman spectroscopy, said ratio being the ratio of the Raman spectrum D band peak area intensity and G band peak area intensity.