A film forming apparatus includes a chamber that is a container in which a sputter gas is introduced, a carrying unit provided inside the chamber, and circulating and carrying a work-piece on a trajectory of a circular circumference, and a film formation processing unit including a sputter source depositing, on the work-piece circulated and carried by the carrying unit, a film formation material by sputtering to form a film, and a dividing member dividing a film forming position where the film is formed on the work-piece by the sputter source. The dividing member is installed so as to divide the film forming position in a way that, in the trajectory of the circular circumference, a trajectory of passing through a region other than the film forming position performing the film formation is longer than a trajectory of passing through the film forming position performing the film formation.

The present invention provides a linear evaporation source, comprising: a heating chamber for containing a vapor deposition material, a mixing chamber located above the heating chamber and used to mix the vapor deposition material vapor, and a channel used to communicate the heating chamber and the mixing chamber, wherein one end of the mixing chamber communicates with the heating chamber through the channel, and the other end is provided with a plurality of nozzles for spraying the vapor deposition material vapor; and heaters are provided at peripheries of the heating chamber, the mixing chamber, the channel and the nozzles. The linear evaporation source of the present invention can control the thickness of the vapor deposition film to have a better uniformity, because the heating of the vapor deposition material and the mixing of the material vapor are conducted in two independent spaces.

A deposition apparatus includes deposition sources, a deposition chamber, a mask assembly, and a transfer unit. The mask assembly includes a support member, a shutter member, and a drive member. The support member has a first opening configured to allow the deposition materials to pass through while supporting the base substrate on which the passed-through deposition materials are deposited. The shutter member is accommodated in the support member and has a second opening smaller than the first opening. The drive member is configured to change a position of the second opening with respect to the base substrate in accordance with the movement of the mask assembly.

A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

A film thickness control system and a film thickness control method for an evaporation device, an evaporation device and an evaporation method are disclosed. The film thickness control system includes: a driving device, a film thickness meter and a computer; the film thickness meter is mounted on the driving device, connected with the computer, and configured to acquire a coordinate of a measured position of a substrate to be measured from the computer and send an actual film thickness of the measured position to the computer; and the computer is configured, when the actual film thickness does not exceed an error range of a preset film thickness, to calculate a new compensation value according to the actual film thickness, the preset film thickness and a current compensation value, and send the new compensation value to the evaporation device as reference for compensating evaporation.

A measuring assembly and method for layer thickness measurement of a layer applied to a substrate by means of a vapor deposition method includes a measuring head which is provided with at least one vibration plate, an extraction line which can be coupled in a gas-conducting or vapor-conducting manner with a first end having a vacuum chamber for the vapor deposition method and which can be coupled in a gas-conducting or vapor-conducting manner with an opposite second end having the measuring head, wherein the extraction line includes at least one heating section or at least one cooling section.

A method aleviating blistering, cracking and chipping in topmost layers of a multilayer system exposed to reactive hydrogen, when producing a reflective optical element (50) having a maximum reflectivity at an operating wavelength of 5 nm to 20 nm. A multilayer system (51) composed of 30-60 stacks (53) is applied to a substrate (52). Each stack has a layer (54) of thickness d.sub.MLs composed of a high refractive index material and a layer (55) of thickness d.sub.MLa composed of a low refractive index material. The thickness ratio is d.sub.MLa/(d.sub.MLa+d.sub.MLs)=Γ.sub.ML. Two to five further stacks (56) are applied to the multilayer system. at least one further stack having a layer (54) of thickness d.sub.s composed of a high refractive index material and a layer (55) of thickness d.sub.a composed of a low refractive index material, wherein the thickness ratio is d.sub.a/(d.sub.a+d.sub.s)=Γ and wherein Γ≠Γ.sub.ML.

A system and method for controllably varying the thickness of film deposition on a spherical or other non-flat substrate during high volume manufacturing is described. A gripping X-Y transfer stage rotates a substrate in-situ in a direction film deposition chamber. The transfer stage is driven at variable speeds to realize a desired distribution of film thickness variation around the surface of the substrate. Spatial variations in disposition thickness can be smoothly and continuously variable or abruptly changed.

A system and method for fabricating a perovskite film is provided, the system including a substrate stage configured to rotate around its central axis at a rotation speed, a first set of evaporation units, each coupled to the side section or the bottom section of the chamber, a second set of evaporation units coupled to the bottom section, and a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The resultant perovskite film includes multiple unit layers, wherein each unit layer is formed by one rotation of the substrate stage, and the composition and thickness of the unit layer are controlled by adjusting at least the evaporation rates, the rotation speed and the horizontal cross-sectional areas.

A window film is disclosed. The window film includes: a flexible transparent base material; a first metal target material film, disposed on the surface of the flexible transparent base material; a first high refractive index compound film, disposed on the surface of the first metal target material film; a first metal oxide film, disposed on the surface of the first high refractive index compound film; a first silver-containing metal film, disposed on the surface of the first metal oxide film; a second metal target material film, disposed on the surface of the first silver-containing metal film; and a second high refractive index compound film, disposed on the surface of the second metal target material film. The window film has better adherence, and is less likely to peel off. In addition, the window film also has better oxidation resistance, and is less likely to be oxidized. Furthermore, the window film also has a better optical effect and heat insulation effect.