Patent classifications
C23C14/542
Component and semiconductor manufacturing device
A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.
Direct-Deposition System Including Standoffs for Controlling Substrate-Mask Separation
The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.
Fabrication of integrated computational elements using cylindrical substrate support shaped to match a cross-section of a spatial profile of a deposition plume
A system includes a computational system to receive a design of an integrated computational element (ICE) including specification of substrate and layers. Additionally, the system includes a deposition source to provide a deposition plume having a plume spatial profile, and a support having a cylindrical surface. The cylindrical surface of the support is spaced apart from the deposition source and has a shape that corresponds to the plume spatial profile in a particular cross-section orthogonal to a longitudinal axis of the cylindrical surface of the support, such that, when the substrate support, with the supported instances of the substrate distributed over the cylindrical surface of the substrate support, is translated relative to the deposition plume along the longitudinal axis of the cylindrical surface of the substrate support, thicknesses of instances of each of the deposited layers are substantially uniform across the plurality of instances of the ICE.
Moth-eye transfer mold, method of manufacturing moth-eye transfer mold, and method of transferring moth-eye structure
To provide a moth-eye transfer mold and a method of manufacturing a moth-eye transfer mold that provide a simple and inexpensive manufacturing process. A moth-eye transfer mold 1 is characterized by including a base 10, an underlayer 20 formed on the base 10, and a glassy carbon layer 30 formed on the underlayer 20, the glassy carbon layer 30 has an inverted moth-eye structure RM over a surface 30a, and the inverted moth-eye structure RM is randomly arranged cone-shaped pores.
METHOD FOR REGULATING COLOR OF HARD COATING, HARD COATING, AND METHOD FOR PREPARING THE SAME
A method for regulating color of a hard coating, including the following steps: providing an amorphous alloy layer; forming an amorphous metal oxide layer on a surface of the amorphous alloy layer to stack the amorphous metal oxide layer on the amorphous alloy layer, so that the amorphous metal oxide layer and the amorphous alloy layer together form the hard coating, wherein a band gap of the amorphous metal oxide layer is in a range from 2 eV to 5 eV, and the color of the hard coating is capable of varying within the visible light spectrum depending on thickness of the amorphous metal oxide layer; and controlling the thickness of the amorphous metal oxide layer in the formation of the amorphous metal oxide layer to obtain the amorphous metal oxide layer of a predetermined color. A hard coating and a method for preparing the same are also provided.
Binary Ag—Cu amorphous thin-films for electronic applications
An interconnect and a method of making an interconnect between one or more features on a substrate comprises: sputtering a noble metal-copper eutectic thin film under controlled power on an oxide grown or deposited on a substrate; and forming an amorphous alloy structure from the noble metal-copper eutectic thin film in the shape of the interconnect and the interconnect comprising no grain or grain boundaries without temperature sensitive resistivity.
SUBLIMATION CONTROL USING DOWNSTREAM PRESSURE SENSING
A system to control gas flow includes an ampoule to store a solid precursor. A heater is to heat the ampoule and to sublimate the solid precursor into a gaseous precursor. A mass flow controller is to regulate a flow of gaseous precursor from the ampoule to a substrate processing chamber. A pressure sensor is to measure a pressure of the gaseous precursor input to the mass flow controller. A controller is to apply power to the electric heater using closed loop control based on the pressure and a pressure setpoint.
FLUID-ASSISTED THERMAL MANAGEMENT OF EVAPORATION SOURCES
In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.
DEVICE AND METHOD FOR MANUFACTURING THIN FILM
A device and a method for manufacturing a thin film are provided. The device includes: a chamber; a substrate carrying member arranged within the chamber and configured to carry thereon a substrate on which the thin film is to be formed; a mask fixation member configured to fix a mask, wherein the mask includes a shielding region and an opening region, and a material for forming the thin film is allowed to pass through the opening region; and a position adjustment member configured to adjust a distance between the mask and the substrate to form the thin films of different sizes on the substrate, wherein orthogonal projections of the thin films of different sizes onto the substrate have different areas.
ENHANCED CATHODIC ARC SOURCE FOR ARC PLASMA DEPOSITION
An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth s of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/ deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of l o the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.