A covering member has a hard film on the surface of a base material, wherein the hard film comprises a layer A selected from a nitride, a carbonitride, an oxynitride, and an oxycarbonitride of Cr or CrM; a metal layer which is formed on the outer surface side of the A layer and includes Cr, Ti, or W; and a layer B which is formed on the outer surface side of the metal layer and selected from a nitride, a carbonitride, an oxynitride, and an oxycarbonitride of Cr or CrM, and wherein M is one or two or more from a Group 4 metal, a Group 5 metal, a Group 6 metal of the periodic table, Al, Si, and B, and strain is introduced in the outer surface side of the metal layer.

The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

The process for producing an orthopedic implant having an integrated silicon nitride surface layer includes steps for positioning the orthopedic implant inside a vacuum chamber, mixing nitrogen gas and vaporized silicon atoms in the vacuum chamber, emitting a relatively high energy beam into the mixture of nitrogen gas and vaporized silicon atoms in the vacuum chamber to cause a gas-phase reaction between the nitrogen gas and the vaporized silicon atoms to form reacted precipitate silicon nitride molecules, and driving the precipitate silicon nitride molecules with the same beam into an outer surface of the orthopedic implant at a relatively high energy such that the precipitate silicon nitride molecules implant therein and form at least a part of the molecular structure of the outer surface of the orthopedic implant, thereby forming the integrated silicon nitride surface layer.

A method for TEM sample preparation and analysis that can be used in a FIB-SEM system without re-welds, unloads, user handling of the lamella, or a motorized flip stage. The method allows a dual beam FIB-SEM system with a typical tilt stage to be used to extract a sample to from a substrate, mount the sample onto a TEM sample holder capable of tilting, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to an electron column for STEM imaging.

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

The present invention discloses an optical bandpass filter structure targeting an arbitrary combination of the spectral ranges of R (red), G (green), B (blue) and IR (infrared) light, which comprises a substrate that is a wafer-based semiconductor sensing element, and a filter layer that is formed on one side of the substrate. The filter layer includes a plurality of basic units organized as a two-dimensional array, in which each of the basic units is composed of a plurality of pixel filter films fabricated by a vacuum coating method.

Barrier films including a (co)polymeric substrate, at least one dyad on the substrate, each dyad made of a (co)polymer layer and an oxide layer overlaying the (co)polymer layer, and an outer (co)polymer layer overlaying the dyads. Optionally, at least one outer oxide layer overlays the outer (co)polymer layer. The barrier films transmit visible light and transmits, at an incident light angle of at least one of 0?, 30?, 45?, 60?, or 75?, at most 70 percent of incident ultraviolet light at a wavelength range from at least 100 nanometers to 400 nanometers or in a wavelength range from at least 100 nm to 350 nm. The barrier films exhibit atomic oxygen degradation of less than 1?10.sup.?20 mg/atom. The barrier films may be applied to decorative objects or electronic devices, (e.g., light receiving or emitting devices, in a satellite or aircraft. Methods of making the barrier films also are disclosed.

A method of manufacturing a plurality of through-holes in a layer of first material by subjecting part of the layer of said first material to ion beam milling. For batch-wise production, the method comprises after a step of providing the layer of first material and before the step of ion beam milling, providing a second layer of a second material on the layer of first material, providing the second layer of the second material with a plurality of holes, the holes being provided at central locations of pits in the first layer, and subjecting the second layer of the second material to said step of ion beam milling at an angle using said second layer of the second material as a shadow mask.

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.