A treatment method for modifying the reflected color of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected color of the treated sapphire material surface, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S).

A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

The present invention relates to an information storage medium and a method for long-term storage of information comprising the steps of: providing a ceramic substrate; coating the ceramic substrate with a layer of a second material different from the material of the ceramic substrate, the layer having a thickness no greater than 10 ?m; tempering the coated ceramic substrate to form a writable plate or disc; encoding information on the writable plate or disc by using a laser and/or a focused particle beam to manipulate localized areas of the writable plate or disc.

The present invention discloses an optical bandpass filter structure targeting an arbitrary combination of the spectral ranges of R (red), G (green), B (blue) and IR (infrared) light, which comprises a substrate that is a wafer-based semiconductor sensing element, and a filter layer that is formed on one side of the substrate. The filter layer includes a plurality of basic units organized as a two-dimensional array, in which each of the basic units is composed of a plurality of pixel filter films fabricated by a vacuum coating method.

An ion milling apparatus includes an ion irradiation source, a sample holder, a sample stage, a rotation mechanism, and a slide mechanism. The sample holder holds a sample such that the sample protrudes from a shielding plate in a direction perpendicular to an optical axis of an ion beam. The rotation mechanism is disposed such that a rotation center of a rotation shaft is perpendicular to the optical axis of the ion beam and parallel to a direction in which the sample protrudes from the shielding plate. The rotation mechanism supports the sample stage such that the sample stage is rotatable. The slide mechanism supports the sample held by the sample holder such that the sample is movable along the optical axis of the ion beam.

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

A guiding member, having a body provided with a bore for mounting a mobile element is presented. The body consists of a metallic material. The bore has a surface layer treated against jamming over a diffusion depth of less than or equal to 0.6 mm. The surface layer has a hardness of greater than or equal to 500 Hv1 over a depth of between 5 and 50 ?m.

The present invention relates to methods and apparatus for ion milling, and more particularly relates to methods and apparatus for smoothing a surface using ion milling.

There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.

A composite wafer has an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, includes steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90 C. or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.