A particle coating method includes placing magnetic particles in a vessel, fixing the magnetic particles by a magnetic force caused by a magnetic field generated in the vessel, and forming a coating film on surfaces of the magnetic particles by an atomic layer deposition method. Further, the method preferably includes forming a coating film on surfaces of the magnetic particles by an atomic layer deposition method in a state where the magnetic particles are fixed by the magnetic force in a first direction, thereby obtaining coated magnetic particles, and forming a coating film on surfaces of the coated magnetic particles in a state where the coated magnetic particles are fixed by the magnetic force in a second direction different from the first direction.

There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.

The present invention is to provide: a method for producing a novel hexagonal boron nitride thin film suitable for industrial use such as application to electronics, in which a hexagonal boron nitride thin film having a large area, a uniform thickness of 1 nm or more, with few grain boundaries can be produced inexpensively; and a hexagonal boron nitride thin film. The hexagonal boron nitride thin film according to the present invention is characterized by having a thickness of 1 nm or more, and an average value of the full width at half maximum of the E.sub.2g peak obtained from Raman spectrum of 9 to 20 cm.sup.−1.

Disclosed herein are structures comprising a titanium, zirconium, or hafnium powder particle with titanium carbide, zirconium carbide, or hafnium carbide (respectively) nano-whiskers grown directly from and anchored to the powder particle. Also disclosed are methods for fabrication of such structures, involving heating the powder particles and exposing the particles to an organic gas.

A film forming method includes: (a) preparing a substrate having an oxide layer formed on the substrate; (b) supplying a nitrogen-containing gas to the substrate heated by a heater; and (c) forming a molybdenum film on the oxide layer by alternately supplying a raw material gas containing molybdenum and a reducing gas a plurality of times.

A particle coating method includes placing magnetic particles in a vessel, fixing the magnetic particles by a magnetic force caused by a magnetic field generated in the vessel, and forming a coating film on surfaces of the magnetic particles by an atomic layer deposition method. Further, the method preferably includes forming a coating film on surfaces of the magnetic particles by an atomic layer deposition method in a state where the magnetic particles are fixed by the magnetic force in a first direction, thereby obtaining coated magnetic particles, and forming a coating film on surfaces of the coated magnetic particles in a state where the coated magnetic particles are fixed by the magnetic force in a second direction different from the first direction.

An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.