Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

The present invention discloses a two-dimensional AlN material and its preparation method and application, wherein the preparation method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer; (4) annealing the substrate; (5) using the MOCVD process to introduce H.sub.2 to open the graphene layer and passivate the surface of the substrate; and (6) using the MOCVD process to grow a two-dimensional AlN layer. The preparation method of the present invention has the advantages that the process is simple, time saving and efficient. Besides, the two-dimensional AlN material prepared by the present invention can be widely used in HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs, and other fields.

A method of forming a graphene structure, includes: providing a substrate; performing a preprocessing by supplying a first processing gas including a carbon-containing gas to the substrate while heating the substrate, without using plasma; and after the preprocessing, forming the graphene structure on a surface of the substrate through a plasma CVD using plasma of a second processing gas including a carbon-containing gas.

There is provided a technique that includes: forming an initial oxide layer on a surface of a substrate by performing a set m times (where m is an integer equal to or greater than 1), the set including non-simultaneously performing: (a) oxidizing the surface of the substrate under a condition that an oxidation amount of the substrate increases from an upstream side to a downstream side of a gas flow by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate; and (b) oxidizing the surface of the substrate under a condition that the oxidation amount of the substrate decreases from the upstream side to the downstream side of the gas flow by supplying the oxygen-containing gas and the hydrogen-containing gas to the substrate; and forming a film on the initial oxide layer by supplying a precursor gas to the substrate.

The present disclosure provides a method for preparing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

Process for making an at least partially coated redox-active material wherein said process comprises the following steps: (a) Treating a redox-active material with a metal alkoxide or metal halide or metal amide or alkyl metal compound, wherein said redox-active material contains at least one metal selected from V, Cr, Mn, Fe, Co, Ni, Ag, Cu, Mo, W, Sn, Sb, Te, Pb, Bi and rare earth metals in an oxidized state, (b) Treating the material obtained in step (a) with anoxidizing agent, (c) Repeating the sequence of steps (a) and (b) from one to 100 times, wherein the average thickness of the resulting coating is in the range of from 0.1 to 50 nm.

Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen. The step of pretreating can additionally include a step of exposing the surface to a gas comprising silicon.

A method for producing a structure containing an array of MWCNTs on a metal substrate, comprising: (i) subjecting a metal substrate to a surface oxidation process at a first elevated temperature in an oxygen-containing atmosphere and under a first reduced pressure; (ii) subjecting the metal substrate to a surface reduction process at a second elevated temperature in a reducing atmosphere and under a second reduced pressure of at least 0.01 atm and less than 1 atm to result in reduction of the surface of said metal substrate, wherein the reducing atmosphere contains hydrogen gas; (iii) subjecting the metal substrate to a third reduced pressure of no more than 0.1 atm; and (iv) contacting the metal substrate, while at the third reduced pressure and under an inert or reducing atmosphere, with an organic substance at a third elevated temperature for suitable time to produce the MWCNTs on the metal substrate.

The present invention provides a polymer substrate with a hardcoat layer exhibiting excellent environmental resistance and wear resistance. A polymer substrate (60) is 1-20 mm thick and a hardcoat layer (70, 80) on the surface thereof comprises: an underlayer cured layer (70) with a thickness of 1-20 μm, and including 10-90 parts by weight of a multifunctional acrylate, and 90-10 parts by weight of inorganic oxide fine particles and/or a silicon compound hydrolytic condensate; and a silicon oxide layer (80) which is in direct contract with the underlayer cured layer, is formed by PE-CVD with an organosilicon compound as the starter material, and satisfies all of the following conditions (a)-(c): (a) the film thickness of the silicon oxide layer is 3.5-9.0 μm; (b) the maximum indentation depth of the surface of the silicon oxide layer by nanoindentation measurement at a maximum load of 1 mN is 150 nm or less; and (c) the limit compression ratio K of the silicon oxide layer is at most 0.975 in a 3-point bending test of the polymer substrate with a hardcoat layer having been subjected to indentation deformation that causes the surface on which the silicon oxide layer is layered to be indented.

A method is disclosed for delectively depositing a material on a substrate wherein the substrate has at least two different surfaces wherein one surface is passivated thereby allowing selective deposition on the non-passivated surface. In particular, disclosed is a method for preparing a surface of a substrate for selective film deposition, wherein the surface of the substrate comprises at least a first surface comprising SiO.sub.2 and an initial concentration of surface hydroxyl groups and a second surface comprising SiH, the method comprising the steps of: contacting the substrate with a wet chemical composition to obtain a treated substrate comprising an increased concentration of surface hydroxyl groups relative to the initial concentration of surface hydroxyl groups; and heating the treated substrate to a temperature of from about 200° C. to about 600° C., wherein the heating step converts at least a portion of the surface hydroxyl groups on the first surface to surface siloxane groups on the surface of the substrate.