A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm.sup.−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

A non-planar chemical vapour deposition polycrystalline diamond body has a dome body having an apex and an outer periphery. The dome body has an average radius of curvature in a range of 4 mm to 25 mm and a maximum linear dimension at the outer periphery of the dome body of no more than 26 mm. The average radius of curvature is no less than 0.6 times the maximum linear dimension at the outer periphery. A method of fabricating the non-planar diamond body is also disclosed.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

A substrate for a tool including at least one sidewall includes at least one diamond layer. The diamond layer has a thickness between 10 nanometers and 1000 nanometers and is formed from diamond grains sized to be 50% or less of diamond layer thickness, with the diamond coating being deposited on the surface of the substrate over the at least one sidewall.

A substrate for a tool including at least one sidewall includes at least one diamond layer. The diamond layer has a thickness between 10 nanometers and 1000 nanometers and is formed from diamond grains sized to be 50% or less of diamond layer thickness, with the diamond coating being deposited on the surface of the substrate over the at least one sidewall.

A cam follower is provided. The cam follower includes a polycrystalline diamond element, including an engagement surface. The engagement surface of the polycrystalline diamond element is positioned on the cam follower for sliding engagement with an opposing engagement surface of a cam. The cam includes at least some of a diamond reactive material.

A diamond tool includes a diamond at least on a cutting edge including one or two or more diamond grains including a diamond phase composed of a diamond crystal structure and a graphite phase composed of a graphite crystal structure. When a ratio I.sub.π*/I.sub.σ* between an intensity of a π* peak derived from a π bond of carbon in the graphite phase and an intensity of a σ* peak derived from a σ bond of carbon in the graphite phase and a σ bond of carbon in the diamond phase is determined for the diamond grain by measuring an energy loss associated with excitation of K-shell electrons of carbon by electron energy loss spectroscopy, the ratio I.sub.π*/I.sub.σ* of the diamond grain on a surface of the cutting edge is 0.1 to 2 and a ratio I.sub.π*/I.sub.σ* of the diamond grain at a depth position of 0.5 μm from the surface of the cutting edge is 0.001 to 0.1.

Disclosed herein is system and method for protective diamond coatings. The method may include the steps of cleaning and seeding a substrate, depositing a crystalline diamond layer on the substrate, etching the substrate; and attaching the substrate to protected matter. The crystalline diamond layer may reflect at least 28 percent of electromagnetic energy in a beam having a bandwidth of 800 nanometer to 1 micrometer.

Disclosed are methods for providing a thin film of nanocrystalline diamond grown on 6 nm nanocrystalline diamond powder on the surface of substrates. The thin film of nanocrystalline diamond can be deposited on wide-bandgap semiconducting devices to provide heat dissipation characteristics to the semiconducting devices.