Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

The invention relates to a method for producing an optoelectronic semiconductor chip (100) comprising the steps: A) providing a surface (2) in a chamber (5), B) providing at least one organic first precursor (3) and one second precursor (4) in the chamber (5), wherein the organic first precursor (3) comprises a gaseous III-compound material (3), wherein the second precursor (4) comprises a gaseous phosphorus-containing compound material (41), C) epitaxial deposition of the first and the second precursor (3, 4) at a temperature between 540 C. inclusive and 660 C. inclusive and a pressure between 30 mbar inclusive and 300 mbar inclusive onto the surface (2) in the chamber (5) to form a first layer (12), comprising a phosphide compound semiconductor material (6), wherein the ratio between the second and the first precursor (3, 4) is between 5 inclusive and 200 inclusive, wherein the phosphide compound semiconductor material (6) produced is doped with carbon, wherein the carbon doping concentration is at least 410.sup.19 cm.sup.3.

A vapor phase growth device includes a flow channel defining a space through which a source gas for forming an epi layer flows, a susceptor configured to hold a substrate in a state where the substrate faces the space, and a first member disposed vertically above and opposite to the susceptor, the first member having a thermal expansion coefficient not less than 0.7 times and not more than 1.3 times the thermal expansion coefficient of the substrate. The flow channel includes a holding portion configured to hold the first member.

A vapor phase growth rate measuring apparatus has an initial parameter setting adjuster to set initial values of fitting parameters, a refractive index of each thin film to be formed on the substrate, a growth rate of each thin film, and at least one parameter having temperature dependence, a film thickness calculator to calculate a film thickness of each thin film, a parameter selector to select a value in accordance with a growth temperature for the parameter, a reflectometer to measure a reflectance of the substrate, a reflectance calculator to calculate a reflectance of the substrate, an error calculator to calculate an error between the calculated reflectance and an actual measurement value of the reflectance measured at a plurality of times, a parameter changer to change at least a part of the values of the fitting parameters, and an output value generator to generate characteristic values of each thin film.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber

Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

A Group III-V semiconductor device and a method of fabricating the same including an in-situ surface passivation layer. A two-stage cleaning process may be effectuated for cleaning a reactor chamber prior to growing one or more epitaxial layers and forming subsequent surface passivation layers, wherein a first cleaning process may involve a remotely generated plasma containing fluorine-based reactive species for removing Si.sub.XN.sub.Y residual material accumulated in the reactor chamber and/or over any components disposed therein.